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Structure and Morphology of Tetracene Thin Films on Hydrogen-Terminated Si(001)

Published online by Cambridge University Press:  26 February 2011

X. R. Qin ,
A. Tersigni ,
J. Shi  and
D. T. Jiang
X. R. Qin
Affiliation:
[email protected], University of Guelph, Department of Physics, 50 Stone Road East, Guelph, N1G 2W1, Canada, (519)824-4120 ext 53675
A. Tersigni
Affiliation:
[email protected], University of Guelph, Department of Physics, Guelph, Ontario, N1G 2W1, Canada
J. Shi
Affiliation:
[email protected], University of Guelph, Department of Physics, Guelph, Ontario, N1G 2W1, Canada
D. T. Jiang
Affiliation:
[email protected], University of Guelph, Department of Physics, Guelph, Ontario, N1G 2W1, Canada
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Abstract

Scanning tunneling microscopy (STM), atomic force microscopy (AFM) and near-edge x-ray absorption fine structure (NEXAFS) have been used to study the structure of tetracene films on hydrogen-passivated Si(001). A distinct growth morphology change that occurs around a few monolayers of film thickness was characterized. This coverage-dependent film structural phase transition leads to a molecularly ordered film structure commensurate with the crystalline substrate.

Keywords

organicthin filmscanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S12-25
Copyright
Copyright © Materials Research Society 2007

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References

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