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Structure and Morphology of μic-SiC:H films Produced by PECVD

Published online by Cambridge University Press:  28 February 2011

F. Demiehelis ,
G. Crovini ,
C. F. Pirri ,
E. Tresso ,
L. Battezzati  and
P. Rava
F. Demiehelis
Affiliation:
Dipartimento Fisica Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, (Italy)
G. Crovini
Affiliation:
Dipartimento Fisica Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, (Italy)
C. F. Pirri
Affiliation:
Dipartimento Fisica Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, (Italy)
E. Tresso
Affiliation:
Dipartimento Fisica Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino, (Italy)
L. Battezzati
Affiliation:
Dipartimento di Chimica dei Materiali, Univ. Di Torino, Via Pietro Giuria, (Italy)
P. Rava
Affiliation:
Elettrorava S.p. A., Via Don Sapino, Savonera Torino, (Italy)
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Abstract

Films of μc-Si:H have been deposited in a conventional PECVD system in order to investigate their structural and morphological properties. They consist of a mixed phase of Si crystallites (50–200 Å), surrounded by grain boundaries, and amorphous regions. In this paper we report results obtained by different characterization techniques which have been used to deduce grain size, microcrystallinity fraction and composition of the crystalline, amoiphous and grain boundary. The amorphous matrix can be considered a covalent network where tetrahedrically coordinated carbon atoms, with 1 on 9 bonds terminated by hydrogen, exist. They form a distribution of large aromatic clusters containing a great number of aromatic rings such as to remarkably reduce the number of network terminators (hydrogen atoms).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 543
Copyright
Copyright © Materials Research Society 1993

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References

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