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Structure and Morphology Characters of GaN Grown by ECR-MBE Using Hydrogen-Nitrogen Mixed Gas Plasma

Published online by Cambridge University Press:  03 September 2012

Tsutomu Araki ,
Yasuo Chiba  and
Yasushi Nanishi
Tsutomu Araki
Affiliation:
Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
Yasuo Chiba
Affiliation:
Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
Yasushi Nanishi
Affiliation:
Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
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Abstract

GaN growth by electron-cyclotron-resonance plasma-excited molecular beam epitaxy using hydrogen-nitrogen mixed gas plasma were carried out on GaN templates with a different polar-surface. Structure and surface morphology of the GaN layers were characterized using transmission electron microscopy. The GaN layer grown with hydrogen on N-polar template showed a relatively flat morphology including hillocks. Columnar domain existed in the center of the hillock, which might be attributed to the existence of tiny inversion domain with Ga-polarity. On the other hand, columnarstructure was formed in the GaN layer grown with hydrogen on Ga-polar template.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.37
Copyright
Copyright © Materials Research Society 1999

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