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Structure and Metastabiltty of Muonium Centers in Semiconductors and their Simulation of Isolated Hydrogen Centers

Published online by Cambridge University Press:  25 February 2011

T.L. Estle ,
R.F. Kiefl ,
J.W. Schneider  and
C. Schwab
T.L. Estle
Affiliation:
Physics Department, Rice University, Houston, TX 77251
R.F. Kiefl
Affiliation:
TRIUMF, Vancouver, B.C., Canada V6T 2A3
J.W. Schneider
Affiliation:
Physics Institute, University of Zurich, CH8001 Zurich, Switzerland
C. Schwab
Affiliation:
Centre tie Reclierches Nucléaires, Universilé Louis Pasteur, 67037 Strasbourg Cedex, France
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Abstract

The study of isolated hydrogen in semiconductors is difficult because of the tendency for hydrogen to form complexes. An alternative to direct studies of hydrogen is the study of tnuonium in semiconductors. In such experiments the muon is essentially an isotope of hydrogen with th the mass of the proton. Twenty isolated muonium centers have been observed in tetrahedrally-coordinated crystals ranging from Si to the cuprous halides. Muon level-crossing resonance has provided detailed information on neutral interstitial muonium located at a bond center in Si (the analog of the hydrogen center seen by EPR) and very near a bond center in CaP and GaAs. This paper reviews these measurements and discusses the structures and their metastabilities. Comparison is made to EPR for Si and to theoretical studies. Recent results on the metastable and stable muonium centers in CuCl are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 407
Copyright
Copyright © Materials Research Society 1990

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