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Structure and Electronic Properties of Molecularly-capped Metal Nanoparticles: The effect of Nano-size, Metal Core and Capping Molecule Probed by X-ray Absorption Spectroscopy

Published online by Cambridge University Press:  11 February 2011

Peng Zhang
Affiliation:
Department of Chemistry, University of Western Ontario, London, ON, N6A5B7, Canada
Tsun-Kong Sham
Affiliation:
Department of Chemistry, University of Western Ontario, London, ON, N6A5B7, Canada
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Abstract

We have conducted an investigation using TEM, XRD and synchrotron based X-ray absorption fine structure (XAFS) to probe the structural and electronic characteristics of several molecularly capped metal nanoparticles (NPs). Three series of NPs were employed in the XAFS study to address the effect of nano-size, metal-core and capping molecules on the structure and properties of the NPs. They are (1) thiol-capped Au NPs from 1.6nm to 4.0nm, (2) thiol-capped Au and Pd NPs of ∼2nm and (3) Au NPs of ∼4nm capped by thiol and tetraoctylammonium bromide (TOAB). The results on their local structure, bonding and d-charge distribution are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Characterization of Nanophase Materials, ed. Wang, Z.L. (Wiley-VCH, Weinham, 2000)Google Scholar
2. X-ray absorption, ed. Koningsberger, D.C., Prins, R. (Wiley, New York, 1988)Google Scholar
3. Chemical Application of Synchrotron Radiation, ed. Sham, T.K. (World Scientific, Singapore, 2002)Google Scholar
4. Brust, M., Walker, M., Bethell, D., Schiffrin, D., Whyman, R., J. Chem. Soc. Chem. Commun. 1994, 801 (1994)Google Scholar
5. Ressler, T., J. Synch. Rad. 5, 118 (1998)Google Scholar
6. Zhang, P., Kim, P.S., Sham, T.K., J. Appl. Phys. 91, 6308 (2002)Google Scholar
7. Zanchet, D., Tolentino, H., Martins Alves, M., Alves, O., Ugarte, D., Chem. Phys. Lett. 323, 167 (2000)Google Scholar
8. Zhang, P., Sham, T.K., Appl. Phys. Lett. 81, 736 (2002)Google Scholar