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The Structure and Electric Field Dependent Dielectric Properties of Annealed Sr1−xBaxTio3 Ferroelectric Thin Films

Published online by Cambridge University Press:  15 February 2011

L.A. Knauss
Affiliation:
NRL/NRC Cooperative Research Associate
J.M. Pond
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook Ave., SW, Washington, DC 20375
J.S. Horwitz
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook Ave., SW, Washington, DC 20375
C.H. Mueller
Affiliation:
SCT, 720 Corporate Circle, Golden, CO 80401
R.E. Treece
Affiliation:
SCT, 720 Corporate Circle, Golden, CO 80401
D.B. Chrisey
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook Ave., SW, Washington, DC 20375
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Abstract

The effect of a post deposition anneal on the structure and dielectric properties of epitaxial Sr1−x, BaxTiO3 (SBT) thin films with x = 0.35, 0.50 and 0.60 has been measured. The films were grown by pulsed laser deposition on LaAlO3(001) substrates at 750°C in 350 mTorr of oxygen. The asdeposited films were single phase, (001) oriented with 0)-scan widths for the (002) reflection between 0.160 and 0.50'. The dielectric properties of the as-deposited films exhibit a broad temperature dependence and a peak which is as much as 50 K below the peak in bulk SBT. Also, the lattice parameter, as measured by x-ray diffraction, of the as-deposited films was larger than the bulk indicating strain in the films. The as-deposited films were annealed for 8 hours at 900°C in oxygen. The dielectric properties of the annealed films were closer to that of bulk SBT and the lattice parameter was closer to the bulk lattice parameter indicating a reduction of strain. Annealing of as-deposited films also resulted in an increased dielectric tuning without increased dielectric loss.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Varadan, V.K., Gohdgaonkar, D.K., Varadan, V.V., Kelly, J.F. and Glikerdas, P., Microwave Journal Jan, 116 (1992).Google Scholar
2. Horwitz, J.S., Chrisey, D.B., Pond, J.M., Auyeung, R.C.Y., Cotell, C.M., Grabowski, K.S., Dorsey, P.C. and Kluskens, M.S., Integrated Ferroelectrics 8, 53 (1995).Google Scholar
3. Smolenskii, G.A. and Rozgachev, K.I., Zh. Tekh. Fiz. 24, 1751 (1954).Google Scholar
4. Knauss, L.A., Horwitz, J.S., Chrisey, D.B., Pond, J.M., Grabowski, K.S., Qadri, S.B., Donovan, E.P. and Mueller, C.H. in Film Synthesis and Growth Using Energetic Beams, edited by Atwater, H.A., Dickinson, J.J., Lowndes, D.H., and Polman, A. (Mater. Res. Soc. Proc. 388, Pittsburgh, PA 1995).Google Scholar
5. Grabowski, K.S., Horwitz, J.S. and Chrisey, D.B., Ferroelectrics 116, 19 (1991).Google Scholar
6. Horwitz, J.S., Chrisey, D.B., Grabowski, K.S. and Leuchtner, R.E., Surface and Coatings Technology 51, 290 (1992).Google Scholar
7. Cullity, B.B., Elements of X-ray Diffraction, Addison-Wesley, 1978, pp. 359360.Google Scholar