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Structure and Characterization of Sputtered Thin Films Based on Lead Titanate.

Published online by Cambridge University Press:  15 February 2011

A. Pignolet
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
P. E. Schmid
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
L. Wang
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
F. Lévy
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
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Abstract

Pure and doped lead-titanate (PT) and lead-zirconate-titanate (PZT) thin films have been deposited on platinum-coated silicon by rf-magnetron sputtering from pressed powder targets. The films have been deposited without substrate heating. The amorphous films were then annealed in an oxygen flow. The structure of the films is tetragonal or rhombohedral depending on composition. The electrical resistivity, dielectric permittivity, ferroelectric hysteresis and pyroelectric coefficient are reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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