Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-05T16:06:28.948Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure Analysis of CeO2/ZrO2/Si Multilayer Thin Films by HRTEM

Published online by Cambridge University Press:  10 February 2011

Takanori Kiguchi ,
Naoki Wakiya ,
Kazuo Shinozaki  and
Nobuyasu Mizutani
Takanori Kiguchi
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Naoki Wakiya
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Nobuyasu Mizutani
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Get access

Abstract

The dependence of the structures of the CeO2/YSZ (Y2O3-ZrO2)/Si multilayer thin films on the YSZ thickness was investigated by HRTEM. The CeO2/YSZ interface is semicoherent with misfit dislocations for the films with 110 nm and 30 nm YSZ thickness. On the other hand, the structure of the films with 0.5 nun YSZ layer are very muzzy since the YSZ is very disordered. However, the CeO2 layer on the 0.5 nm of the YSZ has the lowest mosaicity (highest quality) near the surface, although once the epitaxy is weakened in the YSZ layer and the CeO2 layer just above the YSZ. The mosaicity of the YSZ layer is thought not to be taken over into the CeO2 layer since the columnar structure of the thinner YSZ layer becomes obscure. Moreover, a YSZ layer of only 0.5 nm could inhibit the reduction of CeO2 by Si. The ultra thin YSZ layer of 0.5 nm is necessary because it inhibits the growth of the columnar structure and protects the protection of CeO2 layer from reduction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 183
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Refferences

1.Tarsa, E. J., McCormick, K. L. and Speck, J. S. in Epitaxial Oxide Thin Films and Heterostructures edited by Fork, D.K, Philips, J. M., Ramesh, R., and Wolf, R. M. (Mat. Res. Soc. Symp. Proc. 341, Pittsburgh, PA,1994) pp73–85Google Scholar
2.Suzuki, M. and Ami, T., Mater. Sci. Eng. B41 166–73 (1996)Google Scholar
3.Inoue, T., Yamamoto, Y., Koyama, S., Suzuki, S., and Ueda, Y., Appl. Phys. Lett. 56, 1332 (1990)Google Scholar
4.Yoshimoto, M., Nagata, H., Tsukahara, T., and Koinuma, H., Jpn. J. Appl. Phys. 29, L1199 (1990)Google Scholar
5.Pellet, C., Schwebel, C., and Hest, P., Thin Solid Films 175, 23 (1989)Google Scholar
6.Inoue, T. and Ohsuna, T., Appl. Phys. Lett. 59, 3604 (1991)Google Scholar
7.Hirai, T., Teramoto, K., Koike, H., Nagashima, K., and Tarui, Y., Jpn. J. Appl. Phys. 36, 5253 (1997)Google Scholar
8.Copetti, C. A., Soltner, H., Schubert, J., Zander, W., Hollricher, O., Buchal, Ch., Schulz, H., Tellmann, N., and Klein, N., Appl. Phys. Lett. 63, 1429 (1993)Google Scholar
9.Horita, S., Watanabe, M., and Masuda, A., Mat. Sci. and Eng. B54, 79 (1998)Google Scholar
10.Hirai, T., Teramoto, K., Nishi, T., Goto, T., and Tarui, Y., Jpn. J. Appl. Phys. 35, 5150 (1996)Google Scholar
11.Wakiya, N., Yamada, T., Shinozaki, K., and Mizutani, N., Thin Solid Films, to be published.Google Scholar
12.Bardal, A., Zwerger, M., Eibl, O., Wecker, J., and Matthee, Th., Appl. Phys. Lett. 61, 1243 (1992)Google Scholar