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Structural Relaxation of Amorphous Silicon Induced by High Temperature Annealing
Published online by Cambridge University Press: 26 February 2011
Extract
Structural relaxation of amorphous Si is studied in the temperature range 500-850 °C using Raman spectroscopy. The minumum value for the Raman peakwidth that can be obtained is inversely proportional to the anneal temperature. The relaxation process is basically the same in a-Si prepared by ion implantation and by vacuum evaporation.
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- Copyright © Materials Research Society 1992
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