Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T18:05:56.109Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Properties of Nitrides Grown by Omvpe on Sapphire Substrate

Published online by Cambridge University Press:  10 February 2011

H. Amano ,
T. Takeuchi ,
S. Yamaguchi ,
S. Nitta ,
M. Kariya ,
M. Iwaya ,
C. Wetzel  and
I. Akasaki
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
T. Takeuchi
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
S. Yamaguchi
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
S. Nitta
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
M. Kariya
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
M. Iwaya
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
C. Wetzel
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
Get access

Abstract

Crystalline quality of nitrides on sapphire by OMVPE has been investigated. First, in-situ observations of the crystallization process of the low temperature deposited AIN buffer layer or GaN buffer layer on sapphire substrate have been performed. Small hexagonal mesas were formed from the sapphire to the surface and finally they formed a stacked structure. Secondly, a low temperature deposited buffer layer located between the high temperature grown GaN was found to reduce the etch pit density of GaN films. Thirdly, structural properties of Ga1−xInxN (0 ≤x≤0.21, and x= l) on GaN and GaInN/GaN MQWs on GaN have been characterized by Xray diffraction. Coherently grown GaInN showed almost the same twisting as the underlying GaN layer, while free standing InN showed large twisting. Thickness of the well layers in MQWs has been controlled within one monolayer preciseness, and the fluctuation of alloy composition has been controlled to within 2%

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 479
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dingle, R., Shaklee, K. L., Leheny, R. F. and Zetterstrom, R. B., Appl. Phys. Lett., 19, 5 (1971).Google Scholar
2. Akasaki, I., Amano, H., Sota, S., Sakai, H., Tanaka, T. and Koike, M., Jpn. J. Appl. Phys., 34, L1517(1995).Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys., 35, L74 (1996).Google Scholar
4. Akasaki, I., Sota, S., Sakai, H., Tanaka, T., Koike, M. and Amano, H., Electron. Lett., 32, 1105 (1996).Google Scholar
5. Itaya, K., Onomura, M., Nishio, J., Sugiura, L., Saito, S., Suzuki, M., Rennie, J., Nunoue, S., Yamamoto, M., Fujimoto, H., Kokubun, H., Ohba, Y., Hatakoshi, G. and Ishikawa, M., Jpn. J. Appl. Phys., 35, L1315 (1996).Google Scholar
6. Bulman, G. E., Doverspike, K., Sheppard, S. T., Weeks, T. W., Leonard, M., Kong, H. S., Dieringer, H., Carter, C. and Edmond, J., Device Research Conf., IV-B-8 (1997).Google Scholar
7. Kuramata, A., Domen, K., Soejima, R., Horino, K., Kubota, S. and Tanahashi, T., Jpn. J. Appl. Phys., 36, L1130 (1997).Google Scholar
8. Mack, M. P., Abare, A., Aizcorbe, M., Kozodoy, P., Keller, S., Mishra, U. K., Coldren, L. and DenBaars, S. P., MIJ-NSR Vol.2, Art.41 (1997).Google Scholar
9. Nakamura, F., Kobayashi, T., Asatsuma, T., Funato, K., Yanashima, K., Hashimoto, S., Naganuma, K., Tomioka, S., Miyajima, T., Morita, E., Kawai, H. and Ikeda, M., Proc. Int. Conf. Nitride Semicond., Tokushima, LN-8 (1997).Google Scholar
10. Kneissel, M., Hofstetter, D., Bour, D. P., Donaldson, R., Walker, J. and Johnson, N. M., Presented at Int. Conf. Nitride Semicond., Tokushima, (1997).Google Scholar
11. Yamada, N., Kaneko, Y., Watanabe, S., Yamaoka, Y., Hidaka, T., Nakagawa, S., Marenger, E., Takeuchi, T., Yamaguchi, S., Amano, H. and Akasaki, I., 10th IEEE/Lasers and Electro-Optics Society Annual Meeting, PD1.2 (1997).Google Scholar
12. Nakamura, S., Abstracts of Mat. Res Soc., Fall Meeting, Boston, Session N, 308.12 (1996).Google Scholar
13. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Appl. Phys. Lett., 68, 2105 (1996).Google Scholar
14. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett., 48, 353 (1986).Google Scholar
15. Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K. and Sawaki, N., J. Crystal Growth, 98, 209 (1989).Google Scholar
16. Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T. and Oki, K., J. Crystal Growth, 115, 628 (1991).Google Scholar
17. Nakamura, S., Mukai, T. and Senoh, M., J. Appl. Phys., 71, 5543 (1992).Google Scholar
18. Keller, S., Kapolnek, D., Keller, B. P., Wu, Y., Heying, B., Speck, J. S., Mishra, U. K. and DenBaars, S. P., Jpn. J. Appl. Phys., 35, L285 (1996).Google Scholar
19. Lester, S. D., Ponce, F. A., Craford, M. G. and Steigerwald, D. A., Appl. Phys. Lett., 66, 1249 (1995).Google Scholar
20. Amano, H., Takeuchi, T., Sakai, H., Yamaguchi, S., Wetzel, C. and Akasaki, I., Proc. ICSCIII-N, Stockholm, (1997). (in print)Google Scholar
21. Katsuragawa, M., Ikuta, S., Kato, H., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys., to be submitted.Google Scholar
22. Iwaya, M., Takeuchi, T., Kato, H., Yamaguchi, S., Wetzel, C., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys., to be submitted.Google Scholar
23. Cherns, D., Young, W. T., Steeds, J. W., Ponce, F. A. and Nakamura, S., J. Crystal Growth, 178, 201(1997).Google Scholar
24. Ruvimov, S., Weber, Z. L., Dieker, C., Washburn, J., Koike, M., Amano, H. and Akasaki, I., Mat. Res. Soc. Symp. Proc., 468, 287 (1997).Google Scholar
25. Takeuchi, T., Takeuchi, H., Sota, S., Sakai, H., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. 36, L177 (1997).Google Scholar
26. Leszczynski, M., Grzegory, I., Teisseyre, H., Suski, T., Bockowski, M., Jun, J., Baranowski, J. M., Polowsky, S. and Domagala, J., J. Crsytal Growth, 169, 235 (1996).Google Scholar
27. Detchprohm, T., Hiramatsu, K., Amano, H. and Akasaki, I., Appl. Phys. Lett., 61, 2688 (1992).Google Scholar
28. Kubota, K., Kobayashi, Y. and Fujimoto, K., J. Appl. Phys., 66, 2984 (1989).Google Scholar
29. For example, Kittel, C., Introduction to Solid State Physics, 6th Edition, John Wileypublisher-loc/publisher-loc>, 49 (1986).,+49+(1986).>Google Scholar
30. Gualtieri, J. G., Koshinski, A. and Ballato, A., IEEE Trans. Ultrason. Feroelectr. Freq. Control 41, 53 (1994).Google Scholar
31. Bykhovski, A., Gelmont, B., Shur, M. and Khan, A., J. Appl. Phys. 77, 1616 (1995).Google Scholar
32. Bykhovski, A. D., Kaminski, V. V., Sur, M. S., Chen, Q. C. and Khan, M. A., Appl. Phys. Lett. 68, 818 (1996).Google Scholar
33. Martin, G., Botchkarev, A., Rockett, A. and Morkoc, H., Appl. Phys. Lett, 68, 2541 (1996).Google Scholar
34. Smith, D. L. and Mailhiot, C., Phys. Rev. Lett. 58, 1264 (1987).Google Scholar
35. Sun, D. and Towe, E., Jpn. J. Appl. Phys. 33, 702 (1994).Google Scholar
36. Cardi, E. A., Chang, T. Y., Goossen, K. W. and Eastman, L. F., Appl. Phys. Lett. 56, 659 (1990).Google Scholar
37. Tober, R. L. and Bahder, T. B., Appl. Phys. Lett. 63, 2369 (1993).Google Scholar
38. Halsall, M. P., Nicholls, J. E., Davies, J. J., Cockayne, B. and Wright, P. J., J. Appl. Phys. 71, 907 (1992).Google Scholar
39. Takeuchi, T., Sota, S., Katsuragawa, M., Komori, M., Takeuchi, H., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys., 36, L382 (1997).Google Scholar
40. Sakai, H., Takeuchi, T., Sota, S., Katsuragawa, M., Koomori, M., Amano, H. and Akasaki, I., J. Crystal Growth (to be submitted).Google Scholar