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Structural Properties of Ag-Based Chalcopyrite Compound Thin Films for Solar Cells

Published online by Cambridge University Press:  01 February 2011

Hiroki Ishizaki
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Keiichiro Yamada
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Ryouta Arai
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Yasuyuki Kuromiya
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Yukari Masatsugu
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Naoomi Yamada
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Tokio Nakada
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
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Abstract

AgGa5Se8 and Ag(In1-xGax)Se2 thin films with different Ag/Ga atomic ratios have been deposited on the corning 1737 glass substrates by molecular beam epitaxy (MBE) system. This crystallographic property of AgGa5Se8 thin films has been investigated by x-ray diffraction and rietveld analysis. These films had the tetragonal structure with the space group of P-42m, regardless of Ag/Ga atomic ratio. The lattice parameters and the optical band gap energy decreased with an increase in the Ag/Ga atomic ratio. Thus, the structural and optical properties of these AgGa5Se8 thin films were controlled by the Ag/Ga atomic ratio.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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