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Structural Properties and Doping of Zn1-x(Mg,Li)xOMaterials

Published online by Cambridge University Press:  21 March 2011

R. E. Melgarejo ,
M. S. Tomar ,
A. Hidalgo  and
R. S. Katiyar
R. E. Melgarejo
Affiliation:
Physics Department, University of Puerto Rico, Mayagüez, PR 00681
A. Hidalgo
Affiliation:
Physics Department, University of Puerto Rico, Mayagüez, PR 00681
R. S. Katiyar
Affiliation:
Physics Department, University of Puerto Rico, Rio Piedras, PR 00931
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Abstract

The possibility of the solid solutions with MgO provides the opportunity in ZnO/ZnMgO quantum well structures. The recent observation that n-type conductivity in ZnO is due to hydrogen doping open the avenue for p-doping to form p-n junction devices in ZnO.. We report on the synthesis and structural properties of Zn (Mg,Li)O. The possibility of p-doping by P has been explored.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.4.1
Copyright
Copyright © Materials Research Society 2002

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