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Structural Perfection of in GaAs/InP Superlattices Grown by Gas Source Molecular Beam Epitaxy: A High-Resolution X-Ray Diffraction Study

Published online by Cambridge University Press:  25 February 2011

J. M. Vandenberg ,
M. B. Panish  and
R. A. Hamm
J. M. Vandenberg
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. B. Panish
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. A. Hamm
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

High-resolution X-ray diffraction (HRXRD) studies have been cardied out to determine the structural perfection and periodicity for a number of high-quality InGaAsfInP superlattices grown by gas source molecular beam epitaxy. X-ray scans were carried out with a compact four-crystal monochromator resulting in a resolution of one molecular layer (∼3,Å), which enables one to observe very small variations in the periodic structure. Sharp and strong higher-order satellite reflections in the XRD profiles were observed indicating smooth interfaces with well-defined modulated structures. Excellent computer simulated fits of the X-ray satellite pattern could be generated based on a kinematical XRD step model which assumes ideally sharp interfaces, and periodic structural parameters such as the strain in the well could be extracted. Our results3 demonstrate that HRXRD in conjunction with the kinematical step model is a very sensitive method to assess periodic structural modifications in superlattices as a result of the precise growth conditions in the gas source MBE system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 79
Copyright
Copyright © Materials Research Society 1988

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References

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