Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-23T15:23:00.719Z Has data issue: false hasContentIssue false
  • English
  • Français

The Structural, Optical and Electrical Properties of Spray Deposited Fluorine Doped ZnO Thin Films

Published online by Cambridge University Press:  06 March 2013

Kondaiah Paruchuri ,
Vanjari Sundara Raja ,
Suda Uthanna  and
N. Ravi Chandra Raju
Kondaiah Paruchuri
Affiliation:
Department of Physics, Sri Venkateswara University, Tirupati – 517 502, India
Vanjari Sundara Raja
Affiliation:
Department of Physics, Sri Venkateswara University, Tirupati – 517 502, India
Suda Uthanna
Affiliation:
Department of Physics, Sri Venkateswara University, Tirupati – 517 502, India
N. Ravi Chandra Raju
Affiliation:
Department of Electrical Engineering, IIT Bombay, Mumbai – 400 085, India
Get access

Abstract

Highly transparent and conducting Fluorine doped zinc oxide thin films were deposited using spray pyrolysis method on glass substrates held at 450 °C. The X-ray diffraction study revealed that as the dopant concentration increases in ZnO films, the intensity of the preferential orientation of (002) reflection decreased and (101) was found to increase up to 5 at. % F. The crystallite size was varied from 40 to 50 nm with dopant concentration. The optical band gap of the un-doped films was 3.30 eV and it increased to 3.34 eV for 3 at. % F. The refractive index of the films was increased from 2.05 to 2.18 with the increase of dopant concentration from 0 to 5 at. %. The scanning electron microscopy results depicted that the microstructure of ZnO: F films highly influenced by the fluorine doping. After annealing the films in hydrogen atmosphere, the resistivity of the films decreased as increase the dopant concentration and it is 4×10−3 Ω cm for 3at. % F beyond which it increased. The mobility of the charge carriers was 14 cm2/ V sec and the carrier concentration was 7.8×1019 cm3 obtained for the films doped with 3 at. % of fluorine concentration in the starting solution.

Keywords

spray depositionstructuraloptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium F – Oxide Semiconductors and Thin Films , 2013 , pp. 139 - 144
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kang, D. W., Kuk, S. H., SunJi, K., Lee, H. M. and KooHan, M., Solar Energy Mater. Solar Cells 95, 138 (2011).CrossRefGoogle Scholar
Hwang, D. K., Oh, M. S., Lim, J. H. and Park, S. J., J. Phys. D: Appl. Phys. 40, R387 (2007).CrossRefGoogle Scholar
Vijayalakshmi, K., Ravi dhas, C., Vasanthi Pillay, V. and Gopalakrishna, D., Thin Solid Films 519, 3378 (2011).CrossRefGoogle Scholar
Minami, T., MRS Bull. 25, 28 (2000).CrossRefGoogle Scholar
Ellmer, K., J. Phys. D 34, 3097 (2001).CrossRefGoogle Scholar
Look, D. C., Farlow, G. C., Reunchan, P., Limpijumnong, S., Zhang, S. B. and Nordlund, K., Phys. Rev. Lett. 95 225502–1 (2005).CrossRefGoogle Scholar
Gao, L., Zhang, Y., Zhang, J. M. and Xu, K. W., Appl. Surf. Sci. 257, 2498 (2011).CrossRefGoogle Scholar
Kim, Y., Lee, W., Jung, D. R., Kim, J., Nam, S., Kim, H., and Park, B., Appl. Phys. Lett. 96, 171902 (2010).CrossRefGoogle Scholar
Yang, Z. and Liu, J. L., J. Vac. Sci. Technol. B 28, No. 3, C3D6 (2010).CrossRefGoogle Scholar
Menon, R., Gupta, V., Tan, H. H., Sreenivas, K., and Jagadish, C., J. Appl. Phys. 109, 064905 (2011).CrossRefGoogle Scholar
Hlaing Oo, W. M., Saraf, L. V., Engelhard, M. H., Shutthanandan, V., Bergman, L., Huso, J., and Mc Cluskey, M. D., J. Appl. Phys. 105, 013715 (2009).Google Scholar
Ilican, S., Yakuphanoglu, F., Caglar, M. and Caglar, Y., J. Alloys Comp. 509 5290 (2011).CrossRefGoogle Scholar
Samanta, K., Bhattacharya, P. and Katiyar, R. S., J. Appl. Phys. 108, 113501 (2010).CrossRefGoogle Scholar
Krunks, M., Katerski, A., Dedova, T., Oja Acik, I. and Mere, A., Solar Energy Mater. Solar Cells 92, 1016 (2008).CrossRefGoogle Scholar
Chen, H. X., Ding, J. J., and Ma, S. Y., Physica E 42, 1487 (2010).CrossRefGoogle Scholar
Burstein, E., Phys. Rev. 93, 632 (1954).CrossRefGoogle Scholar
Liu, W. W., Yao, B.. Li, Y. F., Li, B. H., Zhang, Z. Z., Shan, C. X., Zhao, D. X., Zhang, J. Y., Shen, D. Z. and Fan, X. W., Thin Solid Films 518, 3923 (2010).CrossRefGoogle Scholar
Bouderbala, M., Hamzaoui, S., Adnane, M., Sahraoui, T. and Zerdali, M., Thin Solid Films 517, 1572 (2009).CrossRefGoogle Scholar
Zhu, B. L., Wang, J., Zhu, S. J., Wu, J., Wu, R., Zeng, D. W. and Xie, C. S. Thin Solid Films 519, 3809 (2011).CrossRefGoogle Scholar
Anandhi, R., Mohan, R., Swaminathan, K. and Ravichandran, K., Superlattices Microstruct. 51, 680 (2012).CrossRefGoogle Scholar