Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-23T04:03:25.446Z Has data issue: false hasContentIssue false

Structural, Optical and Electrical Properties of InGaN Sputtered Thin Films

Published online by Cambridge University Press:  01 February 2011

Mohammad Ahmad Ebdah
Affiliation:
[email protected], Ohio University, Department of Physics and Astronomy, Athens, Ohio, United States
Daniel R. Hoy
Affiliation:
[email protected], Ohio University, Department of Physics and Astronomy, athens, Ohio, United States
Martin E. Kordesch
Affiliation:
[email protected], Ohio University, Physics, Athens, Ohio, United States
Get access

Abstract

InGaN films were successfully fabricated using radio frequency (RF) magnetron sputtering technique with a sputtering target of pure In and Ga metal alloys under a flow of nitrogen. Films were deposited on quartz substrates, with the ratio of In to Ga varied from 0.46 to 0.85 in the alloys. The structures and compositions have been studied using X-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDX), respectively. Multiple crystallographic phases have been observed indicating phase segregation and inhomogeneous distribution of the metal compositions in the films. The existence of wurtzite structures has been observed in all samples, with the In percentage (y) in a crystalline phase calculated from the XRD being less than the total In percentage (x) in each film as determined by the EDX spectroscopy. The (0002) orientation has been observed in all films, and the (10-11) orientation has been observed for x = 0.46 and 0.70 only. The optical transmission and absorbance of the films were studied by the spectrophotometry technique, which indicate that the dominant phases in all samples are amorphous. Consequently, the corresponding optical bandgaps have been characterized. Hall Effect measurements were made in 0.55 T magnetic field at room temperature to characterize the electrical conductivity, free carrier concentration, and mobility.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 70, 2822 (1997).Google Scholar
2. Tran, C. A., Karlicek, R. F. Jr., Schurman, M., Merai, V., Osinsky, A., Li, Y., Eliashevich, I., Brown, M. G., Nering, J., Dicarlo, T., Ferguson, I., and Stall, R., Proc. 2nd Internat. Symp. Blue Laser and LEDs, 1998 (p. 246).Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Mukai, T., Jpn. J. Appl. Phys. 35 (1996) L74.Google Scholar
4. Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett. 64, 1687 (1994).Google Scholar
5. Amano, H., Tanaka, T., Kunii, Y., Kim, S. T., and Akasaki, I., Appl. Phys. Lett. 64, 1377 (1994).Google Scholar
6. Asif Khan, M., Krishnankutty, S., Skogman, R. A., Kuznia, J. N., Olson, D. T., and George, T., Appl. Phys. Lett. 65, 520 (1994).Google Scholar
7. Singh, R., Doppalapudi, D., Moustakas, T. D., and Romano, L. T., Appl. Phys. Lett. 70, 1089 (1997).Google Scholar
8. El-Masry, N. A., Piner, E. L., Liu, S. X., and Bedair, S. M., Appl. Phys. Lett. 72, 40 (1998).Google Scholar
9. Suresh Kumar, K., Haridoss, Prathap, and Seshadri, S.K., Surface & Coatings Technology, 202, 1764 (2008).Google Scholar
10. Maruska, H. P. and Tietjen, J. J., Appl. Phys. Lett. 15, 327 (1969).Google Scholar
11. Zetterstorm, R. B., J. Mater. Sci 5, 1102 (1970).Google Scholar
12. Burstein, E., Phys. Rev.. 93, 632 (1954).Google Scholar
13. Moss, T.S., Proc. Phys. Soc. Lond. B. 67, 775 (1954).Google Scholar
14. Hamberg, I., Granqvist, C.G., Berggren, K.F., Sernelius, B.E., Engstm, L., Phys. Rev. B. 30, 3240 (1984).Google Scholar