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Structural, Magnetic and Dielectric Properties of Magnetoelectric TbMn1-xCuxO3

Published online by Cambridge University Press:  31 January 2011

Shishir Ray ,
Larry Buroker ,
Mark S Williamsen ,
Ying Zou ,
Somaditya Sen  and
Prasenjit Guptasarma
Shishir Ray
Affiliation:
[email protected], University of Wisconsin Milwaukee, Physics, 1900 E Kenwood Blvd, Milwaukee, Wisconsin, 53211, United States, 414-412-0866
Larry Buroker
Affiliation:
[email protected], University of Wisconsin-Milwaukee, Physics, Milwaukee, Wisconsin, United States
Mark S Williamsen
Affiliation:
[email protected], University of Wisconsin-Milwaukee, Physics, Milwaukee, Wisconsin, United States
Ying Zou
Affiliation:
[email protected], University of Wisconsin-Milwaukee, Physics, Milwaukee, Wisconsin, United States
Somaditya Sen
Affiliation:
[email protected], University of Wisconsin-Milwaukee, Physics, Milwaukee, Wisconsin, United States
Prasenjit Guptasarma
Affiliation:
[email protected], University of Wisconsin-Milwaukee, Physics, Milwaukee, Wisconsin, United States
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Abstract

TbMnO3 is a multiferroic magnetoelectric material known to simultaneously exhibit antiferromagnetism below 40K and ferroelectricity below 28K in the same crystalline phase [1]. Following interesting results of Cu substitution in LaMn1-yCuyO3 [2, 3], we report a study of TbMn1-x CuxO3 (0 < x < 0.15). We describe here our results of crystal structure refinement, together with measurements of magnetic and dielectric properties in the temperature range 2 - 320 K, and magnetic field 0 - 9 T. We find no major changes in structure or symmetry upon substitution of Cu up to x = 0.15 in TbMn1-x CuxO3. Unlike LaMn1-yCuyO3, which exhibits ferromagnetism with very low values of y, we observe antiferromagnetism at x = 0.15. Our study of dielectric properties as a function of temperature suggests increased lossy behavior upon substitution of Cu at the Mn site. In our temperature dependent studies of tan δ at 1 kHz, we observe a well-defined step-like feature near 120K in both pure and substituted samples, possibly ascribable to a change in carrier mobility, or a dielectric-relaxation process mediated by ordered oxygen vacancies [4, 5], which we will continue to study.

Keywords

magnetic propertieselectronic materialTb
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1199: Symposium F –Multiferroic and Ferroelectric Materials , 2009 , 1199-F06-28
Copyright
Copyright © Materials Research Society 2010

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References

1 Pimenov, A., Mukhin, A. A., Ivanov, V. Yu., Travkin, V. D., Balbashov, A. M. and Loidl, A., Nat. Phys. 2, 97, (2006).Google Scholar
2 Srivastava, S.K., Kar, M. and Ravi, S., J. Mag. Mag. Mater. 307, 318, (2006).Google Scholar
3 Sun, Y., Xu, X., Tong, W., and Zhang, Y., Appl. Phys. Lett. 77, 2734, (2000).Google Scholar
4 Wang, C. C., Cui, Y. M., and Zhang, L. W., Appl. Phys. Lett. 90, 012904, (2007).Google Scholar
5 Mufti, N., Nugroho, A. A., Blake, G. R., and Palstra, T. T. M., Phys. Rev. B 78, 024109, (2008).Google Scholar
6 Kimura, T., Lawes, G., Goto, T., Tokura, Y., and Ramirez, A. P., Phys. Rev. B 71, 224425, (2005).Google Scholar
7 Mostovoy, M., Phys. Rev. Lett. 96, 067601, (2006).Google Scholar
8 Goto, T., Kimura, T., Lawes, G., Ramirez, A. P., and Tokura, Y., Phys. Rev. Lett. 92, 257201 (2004).Google Scholar
9 Kim, M. W., Moon, S. J., Jung, J. H., Yu, Jaejun, Parashar, Sachin, Murugavel, P., Lee, J. H., and Noh, T. W., Phys. Rev. Lett. 96, 247205, (2006).Google Scholar
10 Zhou, J.-S. and Goodenough, J. B.. Phys. Rev. Lett. 96, 247202, (2006).Google Scholar
11and Ausloos, M., J. Alloys Compounds 467(1-2), 35 (2009).Google Scholar
12 Blasco, J., Ritter, C., García, J., Teresa, J. M. de Pérez-Cacho, J., and Ibarra, M. R., Phys. Rev. B 62, 5609, (2000).Google Scholar
13 Pérez, F., Heiras, J., Escudero, R., Phys. Stat. Solidi (c), 4, 4049, (2007).Google Scholar
14 Prokhnenko, O., Aliouane, N., Feyerherm, R., Dudzik, E., Wolter, A.U.B., Maljuk, A., Kiefer, K., Argyriou, D.N., arXiv:0909.5082v1 [cond-mat.str-el] (2009).Google Scholar
15 Salamon, M. B., Jaime, Marcelo, Rev. Mod. Phys. 73, 583, (2001).Google Scholar
16 Yang, Z., Ye, L., and Xie, X., Phys. Rev. B 59, 7051, (1998).Google Scholar
17TOPAS-Academic Users Manual, Coelho, A (2008)Google Scholar
18 Shannon, R. D., Acta Cryst. A32, 751 (1976).Google Scholar
19 Schrettle, F., Lunkenheimer, P., Hemberger, J., Ivanov, V. Yu., Mukhin, A. A., Balbashov, A. M., and Loidl, A., Phys. Rev. Lett. 102, 207208, (2009).Google Scholar