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Structural Evolution of Rapid Thermal Carbonized Si Surfaces

Published online by Cambridge University Press:  21 February 2011

Volker Cimalla  and
Jörg Pezoldt
Volker Cimalla
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, Postfach 327, D-98684 Ilmenau, Germany
Jörg Pezoldt
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, Postfach 327, D-98684 Ilmenau, Germany
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Abstract

The structural and morphological evolution of growing β-SiC films was investigated in dependence on the ramp rate and the propane concentration. It is shown that the film structure depends critically on the formation of an initial SiC layer during heating-up. A growth model was proposed to explain the obtained different resulting film structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 33
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Nishino, S., Hazuki, Y., Matsunami, H. and Tanaka, T., J. Electrochem. Soc. 127, 2674 (1980).Google Scholar
2. Matsunami, H., Nishino, S. and Ono, H., IEEE Trans. Electron. Dev. 28, 1235 (1981).Google Scholar
3. Nishino, S., Powell, J.A. and Will, H.A., Appl. Phys. Lett. 42, 460 (1983).Google Scholar
4. Stecki, A.I. and Li, J.P., IEEE Trans. Electr. Dev. 39, 64 (1992).Google Scholar
5. Yoshinobu, T., Fuyuki, T. and Matsunami, H., Jap. J. Appl. Phys. 30, L1086 (1991).Google Scholar
6. Leitz, G., Pezoldt, J., Patzschke, I., Zöllner, J.-P. and Eichhorn, G., Mater. Res. Soc. Proc. 303, 171 (1993).Google Scholar
7. Steckl, A.J. and Li, J.P., Mater. Res. Soc. Proc. 242, 537 (1992).Google Scholar
8. Cimalla, V., Karagodina, K.V., Pezoldt, J. and Eichhorn, G., Mater. Sci. Eng. B, (1994) (to be published).Google Scholar
9. Greene, J.E., in Handbook of crystal growth, vol. 1, edited by Hurle, D.T.J. (Elsevier Scienc Publishers, Amsterdam, 1993) pp. 641–680.Google Scholar
10. Becourt, N., Ponthenier, J.L., Papon, A.M. and Jassaud, C., Physica B185, 79 (1993).Google Scholar
11. Kim, H.J., Davis, R.F., Cox, X.B. and Linton, R.W., J. Electrochem. Soc. 134, 2269 (1987).Google Scholar
12. Mogab, C.J. and Leamy, H.J., J. Appl. Phys. 45, 1075 (1974).Google Scholar
13. Li, J.P. and Stecki, A.J., Mater. Res. Soc. Proc. 280, 739 (1993).Google Scholar
14. Yoshinobu, T., Mitsui, H., Tarai, Y., Fuyuki, T. and Matsunami, H., J. Appl. Phys. 72, 2006 (1992).Google Scholar
15. Liaw, P. and Davis, R.F., J. Electrochem. Soc., 132 (1985) 642.Google Scholar