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The Structural Evolution of A-SI:H Films Prepared by Pulse Rf Power Modulation with Hydrogen and Helium Dilution

Published online by Cambridge University Press:  10 February 2011

Yeu-Long Jiang ,
Min-Chang Lee  and
Shieng-Huai Chen
Yeu-Long Jiang
Affiliation:
Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan
Min-Chang Lee
Affiliation:
Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan
Shieng-Huai Chen
Affiliation:
Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan
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Abstract

A-Si:H films were deposited in a PECVD system using 5k to 5 Hz and 25 to 75% duty cycle square-wave pulse modulation RF power and with 80% hydrogen or 80% helium dilution. The transmission and the microstructure of the hydrogen bonding configuration were measured using NIR-VIS-UV and FTIR spectrometers. The powder formation in the reactor chamber was low for a deposition rate less than 5.87 nm/min and was completely suppressed by the 500 Hz pulse RF power with a duty cycle less than 33.3%. The low microstructure R ratio is the result of the reduction of the polymization reaction in the plasma for a low deposition process. A R ratio less than 14% could be obtained using 500 Hz with a duty cycle less than 33.3% for helium dilution or using 5k to 50 Hz with a duty cycle less than 50% for hydrogen dilution. The refractive index of the films is high for the films with low R ratio. The more compact and higher quality films exhibit greater SiH bonding configurations in the a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 523
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Shirai, H., Das, D., Hanna, J.I. and Shimizu, I., Appl. Phys. Lett., ’59(9), (1991) p. 1096 Google Scholar
[2] Hsu, K.C., Chang, H., Hong, C.S., and Hwang, H.L., Mat. Res. Soc. Symp. Proc. Vol. 258, (1992), pp. 69–74.Google Scholar
[3] Howling, A.A., Hollenstein, Ch., and Paris, P.-J., Appl. Phys. Lett. 59(12)(1991), pp. 1409–1411.Google Scholar
[4] Overzet, L.J and Verdeyen, J.T., Appl. Phys. Lett. 48(11)(1986), pp. 695–697.Google Scholar
[5] Watanabe, Y. et al., Appl. Phys. Lett. 53(14)(1988), pp. 1263–1265.Google Scholar
[6] Lloret, A. et al., J. Appl. Phys. 69(2) (1991), pp. 632–638.Google Scholar
[7] Yoshida, T. et al., Mat. Res. Soc. Symp. Proc. Vol. 219, (1991), pp. 655–665.Google Scholar
[8] Howling, A.A., Sansonnens, L., Dorier, J.-L., and Hollenstein, Ch., J. Appl. Phys. Vol. 75(3)(1994) pp. 1340–1353.Google Scholar
[9] Macarico, A. et al., J. Non-Cryst. Solids 198–200(1996), pp. 1207–1211.Google Scholar
[10] Cody, G.D. et al., Solar Cells, 2, (1980), p. 231.Google Scholar
[11] Ley, L. in “The Physics of Hydrogenated Amorphous Silicon II,” Joannopoulos, J.D. and Lucovsky, G. eds., Springer-Verlag, Berlin, (1984), p. 231.Google Scholar
[12] Bernsten, A.J.M. et al., Mat. Res. Soc. Symp. Proc. Vol. 258, (1992), pp. 275–280.Google Scholar