Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T17:41:43.606Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural, Electrical, and Optical Properties of Erbium-Doped Epitaxial BaTiO3 Films Grown by RF Sputtering

Published online by Cambridge University Press:  15 February 2011

Pedro Barrios ,
Cheng Chung Li ,
Hong Koo Kim  and
Jean Blachere
Pedro Barrios
Affiliation:
University of Pittsburgh, Department of Electrical Engineering, Pittsburgh, PA 15261
Cheng Chung Li
Affiliation:
University of Pittsburgh, Department of Electrical Engineering, Pittsburgh, PA 15261
Hong Koo Kim
Affiliation:
University of Pittsburgh, Department of Electrical Engineering, Pittsburgh, PA 15261
Jean Blachere
Affiliation:
University of Pittsburgh, Department of Materials Science and Engineering, Pittsburgh, PA 15261.
Get access

Abstract

We have investigated the epitaxial growth of Er-doped BaTiO3 films using rf magnetron sputtering. The Er-doped films (0.5 - 1 μm thick) were deposited on MgO (001) single-crystal substrates at various temperatures (500 - 800 °C). The films deposited at 700 °C or above arehighly (001)- oriented with an in-plane epitaxial relationship of BaTiO3[100] ║ MgO[100], as confirmed by X-ray diffraction. The Er doped films were found to be compressively stressed, as-deposited. The amount of stress monotonically decreases as a function of the deposition temperature. The Er-doped epitaxial films show a strong room-temperature photoluminescence at 1.54 μm, which corresponds to intra-transitions of Er3+ ions. Electrical characterizationswere carried out on Er-doped BaTiO3 films that were grown on MgO with a conducting In203 buffer electrode. The measurement shows that the Er-doped BaTiO3 films are ferroelectric with a remanent polarization of 1.5 μC/cm2 and a coercive field of 40 kV/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 279
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See, for example, Ferroelectric Thin Films II, edited by Kingon, A. I., Meyers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc., 243, Pittsburgh, PA 1992).Google Scholar
2. Block, B. A. and Wessels, B. W., Appl. Phys. Lett., 65, 25 (1994).Google Scholar
3. Walker, F. J., McKee, R. A., Yen, H., and Zelmon, D. E., Appl. Phys. Lett., 65, 1495 (1994).Google Scholar
4. Shmulovich, A., Wong, A., Wong, Y. H., Becker, P. C., Bruce, A. J., and Adar, R., Electronics Letters, 28, 1181 (1992).Google Scholar
5. Miniscalco, W. J., J. Lightwave Technol., 9, 234 (1991).Google Scholar
6. Nykolak, G., Haner, M., Becker, P. C., Shmylovich, J., Wong, Y. H., DiGiovanni, D. J., and Bruce, A. J., IEEE Photonics Technol. Lett., 5, 1014 (1993).Google Scholar
7. Kim, H. K., Li, C. C., Fang, X. M., Solomon, J., Nykolak, G., and Becker, P. C., Mater. Res. Soc. Symp. Proc., 301, 55 (1993).Google Scholar
8. Desu, S. B., J. Electrochem. Soc., 140, 2981 (1993).Google Scholar
9. Touloukian, Y. S., Kirby, R. K., Taylor, R. E., Lee, T. Y. R., Thermophysical Properties of Matter: Thermal Expansion, 13, IFI/Plenum, New York, NY, 1977, p. 288 and p.554.Google Scholar
10. Chopra, K. L., Major, S., and Pandya, D. K., Thin Solid Films, 102, 1 (1983).Google Scholar
11. Kim, H. K., Li, C. C., and Barrios, P. J., J. Vac. Sci. Technol. A, 12, 3152 (1994).Google Scholar
12. Uchino, K., Lee, N. M., Toba, T., Usuki, N., Aburatani, H., and Ito, Y., J. Ceramic Society of Japan, 100, 1091 (1992).Google Scholar