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Structural Disorder in Hard Amorphous Carbon Films Implanted with Nitrogen Ions

Published online by Cambridge University Press:  21 February 2011

F.L. Freire Jr.
Affiliation:
Departamento de Fìsica, PUC-Rio, Rio de Janeiro, 22452, RJ, Brazil
D.F. Franceschini
Affiliation:
Departamento de Fìsica, PUC-Rio, Rio de Janeiro, 22452, RJ, Brazil
C.A. Achete
Affiliation:
PEMM, COPPE, Universidade Federal do Rio de Janeiro, 21910, Brazil
R.S. Brusa
Affiliation:
Dipartimento di Fisica, Universita di Trento, 38050, TN, Italy
G. Mariotto
Affiliation:
Dipartimento di Fisica, Universita di Trento, 38050, TN, Italy
G. P. Karwasz
Affiliation:
Dipartimento di Fisica, Universita di Trento, 38050, TN, Italy
R. Canteri
Affiliation:
Centro Materiali e Biofisica Medica, ITC, Trento,38050, TN, Italy
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Abstract

Hard amorphous hydrogenated carbon films deposited by self-bias glow discharge were implanted at room temperature with 70 keV-nitrogen ions at fluences between 2.0 and 9.0×1016 N/cm2. The implanted samples were analyzed by Raman spectroscopy, SIMS and positron annihilation spectroscopy (Doppler broadening technique with the determination of the parameter S. For samples implanted with 2.0x1016 N/cm2 the S parameter follows the vacancies depth profile predicted by Monte Carlo simulation. For higher fluences we observed a reduction in the measured value of S. This result is discussed in terms of both hydrogen loss and structural modifications(increase of disorder at local scale and of the number of graphitic domains) induced in the carbon film by ion implantation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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