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Structural Defect-Related Photoluminescence in GaN

Published online by Cambridge University Press:  01 February 2011

L. Chen ,
B. J. Skromme ,
M. K. Mikhov ,
H. Yamane ,
M. Aoki ,
F. J. DiSalvo ,
B. Wagner ,
R. F. Davis ,
P. A. Grudowski  and
R. D. Dupuis
L. Chen
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–5706, U.S.A.
B. J. Skromme
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–5706, U.S.A.
M. K. Mikhov
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–5706, U.S.A.
H. Yamane
Affiliation:
Tohoku University, Sendai 980–8577, Japan
M. Aoki
Affiliation:
Tohoku University, Sendai 980–8577, Japan
F. J. DiSalvo
Affiliation:
Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853, U.S.A.
B. Wagner
Affiliation:
Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853, U.S.A.
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907, U.S.A.
P. A. Grudowski
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712–1100, U.S.A.
R. D. Dupuis
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712–1100, U.S.A.
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Abstract

Broad, low temperature photoluminescence (PL) peaks near 3.4–3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.55
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Albrecht, M., Christiansen, S., Salviati, G., Zanotti-Fregonara, C., Rebane, Y.T., Shreter, Y.G., Mayer, M., Pelzmann, A., Kamp, M., Ebeling, K.J., Bremser, M.D., Davis, R.F., and Strunk, H.P., MRS Proc. 468, 293 (1997).Google Scholar
2. Shreter, Y.G., Rebane, Y.T., Davis, T.J., Barnard, J., Darbyshire, M., Steeds, J.W., Perry, W.G., Bremser, M.D., and Davis, R.F., MRS Proc. 449 683 (1997).Google Scholar
3. Fischer, S., Wetzel, C., Walukiewicz, W., and Haller, E.E., MRS Proc. 395, 571(1996).Google Scholar
4. Xu, S.J., Wang, H.J., Cheung, S.H., Li, Q., Dai, X.Q., Xie, M.H., and Tong, S.Y., Appl. Phys. Lett. 83, 3477 (2003).Google Scholar
5. Bai, J., Dudley, M., Raghothamachar, B., Gouma, P., Skromme, B.J., Chen, L., Hartlieb, P.J., Michaels, E., and Kolis, J.W., submitted to Appl. Phys. Lett.Google Scholar
6. Chung, B.C. and Gershenzon, M., J. Appl. Phys. 72, 651 (1992).Google Scholar
7. Bell, A., Harrison, I., Cheng, T.S., Korakakis, D., Foxon, C.T., Novikov, S., Ya Ber, B., and Kudriavtsev, Y.A., Semicond. Sci. Technol. 15, 789 (2000).Google Scholar
8. Grudowski, P.A., Holmes, A.L., Eiting, C.J., and Dupuis, R.D., Appl. Phys. Lett. 69, 3626 (1996).Google Scholar
9. Grandjean, N., Leroux, M., Laugt, M., and Massies, J., Appl. Phys. Lett. 71, 240 (1997).Google Scholar
10. Calleja, E., Sanchez-Garcia, M.A., Sanchez, F.J., Calle, F., Naranjo, F.B., and Munoz, E., Phys. Rev. B 62, 16826 (2000).Google Scholar
11. Aoki, M., Yamane, H., Shimada, M., Sarayama, S., and DiSalvo, F.J., Crystal Growth Des. Vol. 1 (2001) p. 119; and J. Crystal Growth 242, 70 (2002).Google Scholar
12. Skromme, B.J., Palle, K.C., Poweleit, C.D., Yamane, H., Aoki, M., and DiSalvo, F.J., J. Crystal Growth Vol. 246 (2002) p. 299; and Appl. Phys. Lett. 81, 3765 (2002).Google Scholar
13. Skromme, B.J., Chen, L., Mikhov, M.K., Yamane, H., Aoki, M., and DiSalvo, F.J., Internat. Conf. on SiC and Related Mater. 2003, Paper WeP4–18, submitted to Mater. Sci. Forum.Google Scholar
14. Majewski, J.A. and Vogl, P., MRS Internet J. Nitride Semicond. Res. 3, 21 (1998).Google Scholar
15. Stampfl, C. and Van de Walle, C.G., Phys. Rev. B 57, R15052 (1998).Google Scholar
16. Bernardini, F., Fiorentini, V. and Vanderbilt, D., Phys. Rev. B 56, R10024 (1997).Google Scholar