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A Structural Comparison of Si(100) Oxidized by Atomic and Molecular Oxygen

Published online by Cambridge University Press:  11 February 2011

Maja Randjelovic  and
Judith C. Yang
Maja Randjelovic
Affiliation:
Materials Science and Engineering Department, 848 Benedum Hall, University of Pittsburgh, Pittsburgh PA 15213, USA
Judith C. Yang
Affiliation:
Materials Science and Engineering Department, 848 Benedum Hall, University of Pittsburgh, Pittsburgh PA 15213, USA
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Abstract

We compared the structural characteristics of a silica layer formed on Si(100) by oxidation in hyperthermal atomic oxygen and molecular oxygen at 493K. The laser detonation method was used to create primarily neutral atomic oxygen with kinetic energy of 5.1eV. The silicon oxides were characterized by High Resolution Transmission Electron Microscopy (HRTEM), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS), Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). We determined that atomic oxygen forms amorphous silica that is almost twice as thick and nearly double the surface roughness as compared to molecular oxygen - formed silica at the same temperature and time conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 751: Symposium Z – Structure-Property Relationships of Oxide Surfaces and Interfaces II , 2002 , Z3.43
Copyright
Copyright © Materials Research Society 2003

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References

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