Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T17:37:56.348Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Characterization of Low-Temperature InN Buffer Layer Grown by RF-MBE

Published online by Cambridge University Press:  01 February 2011

T. Araki  and
Y. Nanishi
T. Araki
Affiliation:
Dept. of Photonics, Ritsumeikan University, 1–1–1 Noji-higashi, Kusatsu, Shiga 525–8577, Japan
Y. Nanishi
Affiliation:
Dept. of Photonics, Ritsumeikan University, 1–1–1 Noji-higashi, Kusatsu, Shiga 525–8577, Japan
Get access

Abstract

The microstructure of an InN buffer layer grown on (0001) sapphire at low temperature by radio-frequency molecular beam epitaxy (RF-MBE) is characterized by transmission electron microscopy. The low-temperature InN buffer layer is found to contain local inhomogeneous regions of island-like grains surrounded by misoriented InN grains and inclusions of cubic phase. The generation of such anti-phase InN nuclei near the island-like grains is expected to give rise to defects at the interface. It is considered that these anti-phase InN nuclei are formed by local fluctuations of stoichiometry due to inadequate surface migration during the growth of the InN buffer layer, indicating the important of controlling the surface stoichiometry during InN growth.

Type
articles
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.68
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. O'Leary, S. K., Foutz, B. E., Shur, M. S., Bhapkar, U. V. and Eastman, L. F., J. Appl. Phys. 83, 826 (1998).Google Scholar
2. Foutz, B. E., O'Leary, S. K., Shur, M. S. and Eastman, L. F., J. Appl. Phys. 85, 7727 (1999).Google Scholar
3. Davydov, V. Y., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., Furthmuller, J., Harima, H., Mudryi, A. V., Adrhold, J., Semchinova, O. and Graul, J., Phys. Stat. Sol. (b) 229, R1 (2002).Google Scholar
4. Wu, J., Walukiewicz, W., Yu, K. M., Arger, J. W. III, Haller, E. E., Lu, H., Schaff, W. J., Saito, Y. and Nanishi, Y., Appl. Phys. Lett. 80, 3967 (2002).Google Scholar
5. Matsuoka, T., Okamoto, H., Nakao, M., Harima, H. and Kurimoto, E., Appl. Phys. Lett. 81, 1246 (2002).Google Scholar
6. Saito, Y., Harima, H., Kurimoto, E., Yamaguchi, T., Teraguchi, N., Suzuki, A., Araki, T., and Nanishi, Y., Phys. Stat. Sol. (b) 234, 796 (2002).Google Scholar
7. Xu, K. and Yoshikawa, A., Appl. Phys. Lett. 83, 251 (2003).Google Scholar
8. Osamura, K., Nakajima, K. and Murakami, Y., Solid State Commun. 11, 617 (1972).Google Scholar
9. Tansley, T. L. and Foley, C. P., J. Appl. Phys. 59, 3241(1986).Google Scholar
10. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Goutam, K. and Eastman, L. F., Appl. Phys. Lett. 79, 1489 (2001).Google Scholar
11. Lu, H., Schaff, W. J., Eastmanl, L. F., Wu, J., Walukiewicz, W., Look, D. C. and Molnar, R. J., 2002 MRS Fall Meeting Proc., L4.10 (2002).Google Scholar
12. Higashiwaki, M. and Matsui, T., Jpn. J. Appl. Phys. 41, L540 (2002).Google Scholar
13. Nanishi, Y., Saito, Y. and Yamaguchi, T., Jpn. J. Appl. Phys. 42, 2549 (2003).Google Scholar
14. Xu, K., Hashimoto, N., Cao, B., Hata, T., Terashima, W., Yoshitani, M., Ishitani, Y., Yoshikawa, A., Phys. Stat. Sol. (c) 0, 2790 (2003).Google Scholar
15. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
16. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Yeo, W., Pharkya, A. and Eastman, L. F., Appl. Phys. Lett. 77, 2548 (2000).Google Scholar
17. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Koley, G. and Eastman, L. F., Appl. Phys. Lett. 79, 1489 (2001).Google Scholar
18. Saito, Y., Teraguchi, N., Suzuki, A., Araki, T., and Nanishi, Y., Jpn. J. Appl. Phys. 40, L91 (2001).Google Scholar
19. Araki, T., Ueta, S., Mizuo, K., Yamaguchi, T., Saito, Y., Nanishi, Y., Phys. Stat. Sol. (c) 0, 2798 (2003).Google Scholar
20. Ivanov, S. V.: to be published in Nitride Semiconductors (Handbook on Materials and Devices), ed. Ruterana, P., Albrecht, M. and Neugebauor, J. (Wiley-VCH).Google Scholar