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Structural Characterization of GaP/GaAs/GaP Heterostructure by TEM

Published online by Cambridge University Press:  25 February 2011

G. Aragón ,
S. I. Molina  and
R. García
G. Aragón
Affiliation:
Departamento de Química Inorgánica. Universidad de Cádiz. Apdo 40. Puerto Real, 11510-CADIZ. Spain.
S. I. Molina
Affiliation:
Departamento de Química Inorgánica. Universidad de Cádiz. Apdo 40. Puerto Real, 11510-CADIZ. Spain.
R. García
Affiliation:
Departamento de Química Inorgánica. Universidad de Cádiz. Apdo 40. Puerto Real, 11510-CADIZ. Spain.
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Abstract

The defect structure in a GaP/GaAs/GaP heterostructure deposited on a (001) GaAs substrate with a GaAs buffer layer has been characterized by cross sectional TEM. The buffer layer presents dislocations and (α-δ)-fringe contrast parallel to (001) interface plane. HREM study reveals uniformly distributed amorphous capsules in the first GaP/GaAs buffer layer interface. The dominant defects are microtwins which are propagated into the overall heterostructure. Microtwin density is different in the GaP and GaAs layers.The different stress signs may explain the density difference.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 449
Copyright
Copyright © Materials Research Society 1993

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References

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