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Structural characterization and Coulomb blockade of a-SiNx/ nanocrystalline Si /a-SiNx asymmetric double-barrier structures

Published online by Cambridge University Press:  01 February 2011

L. C. Wu ,
M. Dai ,
X. F. Huang ,
P. G. Han ,
L. W. Yu ,
H. C. Zou ,
W. Li  and
K. J. Chen
L. C. Wu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
M. Dai
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
X. F. Huang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
P. G. Han
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
L. W. Yu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
H. C. Zou
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
W. Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
K. J. Chen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
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Abstract

We have fabricated a series of a-SiNx/nc-Si/a-SiNx double-barrier structural samples by plasma-enhanced chemical vapor deposition (PECVD) and subsequent thermal annealing technique. The micro-structural properties of the samples were studied by using Raman scattering spectroscopy, planar and cross-section transmission electron microscopy (TEM). The electrical properties of the samples were investigated by frequency dependence of capacitance voltage (C-V) measurements. Charging effect in the nc-Si was exhibited through the hysteresis phenomena of the C-V curve and explained by F-N tunneling. For the thicker SiNx barrier layer samples, Coulomb blockade effect was observed in C-V curve for the sample with thinner SiNx barrier layer, in which two capacitance peaks appeared, and explained by direct tunneling of electrons into the nc-Si through the tunneling SiNx layers. From the interval between the two peaks, the Coulomb charging energy of nc-Si dot was estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F3.6
Copyright
Copyright © Materials Research Society 2005

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References

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