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Structural Changes Induced by Swift Heavy Ion Beams in tensile strained Al (1-x)InxN /GaN Hetero-structures

Published online by Cambridge University Press:  29 July 2011

G. Devaraju ,
Anand P. Pathak ,
N. Srinivasa Rao ,
V. Saikiran ,
N. Sathish  and
S. V.S Nageswara Rao
G. Devaraju
Affiliation:
School of Physics, University of Hyderabad, Hyderabad 500046, A P, India
Anand P. Pathak
Affiliation:
School of Physics, University of Hyderabad, Hyderabad 500046, A P, India
N. Srinivasa Rao
Affiliation:
School of Physics, University of Hyderabad, Hyderabad 500046, A P, India
V. Saikiran
Affiliation:
School of Physics, University of Hyderabad, Hyderabad 500046, A P, India
N. Sathish
Affiliation:
School of Physics, University of Hyderabad, Hyderabad 500046, A P, India
S. V.S Nageswara Rao
Affiliation:
School of Physics, University of Hyderabad, Hyderabad 500046, A P, India
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Abstract

We report here swift heavy ion (SHI) irradiation induced effects on structural and surface properties of III-nitrides. Tensile strained Al(1-x)InxN/GaN Hetero-Structures (HS) were realized using Metal Organic Chemical Vapour Despotion (MOCVD) technique with indium composition as 12%. Ion species and energies are chosen such that electronic energy deposition rates differ significantly in Al(1-x)InxN and are essential for understanding the ion beam interactions at the interfaces. Thus the samples were irradiated with 80 MeV Ni6+ and 100 MeV Ag7+ ions at varied fluence (1×1012 and 3 ×1012 ions/cm2) to alter the structural properties. Under this energy regime, the structural changes in Al(1-x)InxN would occur due to the intense ultrafast excitations of electrons along the ion path. We employed different characterization techniques like High Resolution X- ray Diffraction (HRXRD) and Rutherford back scattering spectrometry (RBS) for composition, thickness and strain. HRXRD and RBS experimental spectra have been fitted with Philip’s epitaxy SIMNRA code, which yields thickness and composition from compound semiconductors. The surface morphology of pristine and irradiated samples is studied and compared by Atomic Force Microscopy (AFM).

Keywords

ion-solid interactionsRutherford backscattering (RBS)III-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1354: Symposium II – Ion Beams—New Applications from Mesoscale to Nanoscale , 2011 , mrss11-1354-ii09-05
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Lester, S D, Ponce, F A, Craford, M G and, Streigerwald, A, Appl. Phys. Lett. 66, 1249(1995)10.1063/1.113252Google Scholar
2. Debuk, V. G. and Vozny, A. V., Semiconductors. 39, 623(2005).10.1134/1.1944849Google Scholar
3. Karpov, S. Y., Podolskaya, N., Zhmakin, I. A., and Zhmakin, A. I., Phys. Rev. B. 70, 235203 (2004).10.1103/PhysRevB.70.235203Google Scholar
4. Ferhat, M. and Bechstedt, F., Phys. Rev. B. 65, 075213 (2002).10.1103/PhysRevB.65.075213Google Scholar
5. Butte, R, Carlin, I F, Feltin, E, Gonschorek, M, Nicolay, S, Christmann, G, Simeonov, D, Catiglia, A, Dorsaz, J, Buehlmann, H J, , Christopoulos, S., von Hogersthal, G.B.H., Grundy, A.J.D., Mosca, M., Pinquier, C., Py, M.A., Demangeot, F., Frandon, J., Lagoudakis, P.G., Baumberg, J.J. and Grandjean, N.J., J. Appl. Phys. D. 40, 6328 (2007)10.1088/0022-3727/40/20/S16Google Scholar
6. Dadgar, A, Schulze, F, Blasing, J, Diez, A, krost, A, Neuburger, M, Kohn, E, Daumiller, I, and Kunze, M, Appl. Phys. Lett. 85, 5400(2004)10.1063/1.1828580Google Scholar
7. Weber, W. H. and Merlin, R., Editors, Raman Scattering in Materials Science, Springer, Berlin (2000).10.1007/978-3-662-04221-2Google Scholar
8. White, B. D., Bataiev, M., Brillson, L. J., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., Dettmer, R. W., Schaff, W. J., Champlain, J. G. and Mishra, A. K., IEEE Trans. Nucl. Sci., 49, 2695 (2002)10.1109/TNS.2002.805427Google Scholar
9. Ziegler, J. F., Biersack, J. P., and Ziegler, M. D., The Stopping and Range of Ions in Matter, 2008, www.SRIM.org; originally based on TRIM code by J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985). Google Scholar
10. Halliwell, M. A. G. and Lyons, M. H., Hill, M. J., J. Cryst. Growth. 68, 523 (1984)10.1016/0022-0248(84)90459-7Google Scholar
11. Mayer, M., Report IPP 9/113, Max–Planck-Institut für Plasmaphysik, Garching, Germany, 1997.Google Scholar