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Structural and Optical Properties of Strained Gallium Nitride Nanowires

Published online by Cambridge University Press:  01 February 2011

Hee Won Seo ,
Seung Yong Bae ,
Jeunghee Park ,
Hyunik Yang ,
Kwang Soo Park  and
Sangsig Kim
Hee Won Seo
Affiliation:
Department of Chemistry, Korea University, Jochiwon 339-700 Korea;
Seung Yong Bae
Affiliation:
Department of Chemistry, Korea University, Jochiwon 339-700 Korea;
Jeunghee Park*
Affiliation:
Department of Chemistry, Korea University, Jochiwon 339-700 Korea;
Hyunik Yang
Affiliation:
College of Engineering Science, Hanyang University, Ansan 425-791 Korea;
Kwang Soo Park
Affiliation:
Department of Electric and Electronic engineering, Korea University, Seoul 136-701 Korea
Sangsig Kim
Affiliation:
Department of Electric and Electronic engineering, Korea University, Seoul 136-701 Korea
*
*Corresponding author: [email protected]
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Abstract

Bulk-quantity single crystalline wurtzite gallium nitride nanowires with a mean diameter of 25 nm were synthesized on silicon substrate using a catalyst-assisted reaction of gallium and gallium nitride mixture with ammonia. They exhibit a strong and broad photoluminescence in the energy range of 2.9-3.6 eV with no yellow band. X-ray diffraction and Raman scattering data suggest that the nanowires would experience biaxial compressive stresses in the inward radial direction and the induced tensile uniaxial stresses in the wire axis. The blue photoluminescence would originate from the recombination of the bound excitons under the compressive and tensile stresses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K7.1
Copyright
Copyright © Materials Research Society 2002

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