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Published online by Cambridge University Press: 01 February 2011
The investigated InGaN ternary films were grown by MOMBE, with the In fraction varying from 6% to 100%. Using XRD and TEM, we determine the crystalline state, the nature of defects inside the layers and their distribution as related to the In concentration. The band gap of the alloys was studied through PL measurements, it is below 1 eV for InN.