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Structural and Ferroelectric Properties of Epitaxial PbZr0.52Ti0.48O3 and BaTiO3 Thin Films Prepared on SrRuO3/SrTiO3(100) Substrates

Published online by Cambridge University Press:  17 March 2011

J. Rodríguez Contreras ,
J. Schubert ,
U. Poppe ,
O. Trithaveesak ,
K. Szot ,
Ch. Buchal ,
H. Kohlstedt  and
R. Waser
J. Rodríguez Contreras
Affiliation:
Forschungszentrum Jülich, Institut für Festkörperforschung IFF, 52425 Jülich, Germany
J. Schubert
Affiliation:
Forschungszentrum Jülich, Institut für Schichten und Grenzflächen ISG, 52425 Jülich, Germany
U. Poppe
Affiliation:
Forschungszentrum Jülich, Institut für Festkörperforschung IFF, 52425 Jülich, Germany
O. Trithaveesak
Affiliation:
Forschungszentrum Jülich, Institut für Schichten und Grenzflächen ISG, 52425 Jülich, Germany
K. Szot
Affiliation:
Forschungszentrum Jülich, Institut für Festkörperforschung IFF, 52425 Jülich, Germany
Ch. Buchal
Affiliation:
Forschungszentrum Jülich, Institut für Schichten und Grenzflächen ISG, 52425 Jülich, Germany
H. Kohlstedt
Affiliation:
Forschungszentrum Jülich, Institut für Festkörperforschung IFF, 52425 Jülich, Germany
R. Waser
Affiliation:
Forschungszentrum Jülich, Institut für Festkörperforschung IFF, 52425 Jülich, Germany
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Abstract

We have prepared single crystalline epitaxial PbZr0.52Ti0.48O3 (PZT) and BaTiO3 (BTO) thin films on single crystalline epitaxial SrRuO3 (SRO) thin films grown on SrTiO3 (100) (STO) substrates. PZT and SRO thin films were grown using high-pressure on-axis sputtering and BTO using pulsed laser deposition (PLD). The film thickness ranged between 12 to 165 nm. Their excellent structural properties, surface smoothness and interface sharpness were demonstrated by X-Ray Diffraction measurements (XRD), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Rutherford Backscattering Spectrometry and Channeling measurements (RBS/C) were used to analyze stoichiometry and crystalline quality. Ferroelectric hysteresis loops were obtained for all films of a thickness down to 12 nm showing a decrease in the remanent polarization Pr and an increase in the coercive field Ec towards thinner film thicknesses. Furthermore we have prepared tunneling junctions with a PZT or BTO barrier thickness of 3-6 nm. Reproducible bi-stable I-V-curves and bias dependence of the conductance were obtained suggesting an influence of the ferroelectric properties of the barrier material on the tunnel current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C8.10.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Poppe, U., Schubert, J., Arons, R.R., Evers, W., Freiburg, Ch., Reichert, W., Schmidt, K., Sybertz, W., Urban, K., Solid State Communication 66(6), 661–665 (1988)Google Scholar
2. Stritzker, B., Schubert, J., Poppe, U., Zander, W., Krüger, U., Lubig, A., Buchal, Ch., Journal of Less-Common Metals 164&165, 279–291 (1990)Google Scholar
3. Grossmann, M., Lohse, O., Schneller, T., Bolten, D., Boettger, U., Contreras, J. Rodríguez, Kohlstedt, H., and Waser, R., Accepted by Int. Ferroelectrics for publ. (Proceedings ISIF 2001)Google Scholar
4. Lu, Y., Li, X. W., Gong, G. Q., Xiao, G., Gupta, A., Lecoeur, P., Sun, J. Z., Wang, Y. Y., and David, V. P., Phys. Rev. B 54, 8357 (1996); J. Z.Sun, L. Krusin-Elbaum, P. R.Duncombe, A.Gupta, and R. B.Laibowitz, Appl. Phys. Lett. 70, 1769 (1997).Google Scholar
5. Kohlstedt, H., Pertsev, N., and Waser, R., Phys. Rev. B 54, 8357 Fall Meeting, MRS 2001 Google Scholar
6. Kohlstedt, H., Contreras, J. Rodríguez, Schubert, J., Poppe, U., Jia, C., Pertsev, N. A., and Waser, R., to be submittedGoogle Scholar
7. Yanase, N., Abe, K., Fukushima, N., Kawabuko, T., Jpn. J. Appl. Phys. 38, 5305–5308 (1999)Google Scholar
8. Lin, C. H., Friddle, P.A., Ma, C.H., Daga, A., and Chen, Haydn, J. Appl. Phys. 90, 1509 (2001)Google Scholar
9. Brinkman, W.F., Dynes, R. C., and Rowell, J. M., J. Appl. Phys. 41, 1915 (1970)Google Scholar
10. Sun, J. Z., Philos. Trans. R. Soc. London, Ser. A 356, 1623 (1998)Google Scholar
11. Sun, J. Z., Roche, K. P., and Parkin, S. S. P., Phys. Rev. B 61, 11244 (2000)Google Scholar