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Structural and Electronic Characterization of Epitaxially-Grown Ferroelectric Vinylidene Fluoride Oligomer Thin Films

Published online by Cambridge University Press:  10 February 2011

K. Ishida ,
K. Noda ,
A. Kubono ,
T. Horiuchi ,
H. Yamada  and
K. Matsushige
K. Ishida
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshidahonmachi, Sakyo-ku, Kyoto 606–8501, Japan
K. Noda
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshidahonmachi, Sakyo-ku, Kyoto 606–8501, Japan
A. Kubono
Affiliation:
Department of Polymer Science and Engineering, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606–8585, JapanE-mail :[email protected]
T. Horiuchi
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshidahonmachi, Sakyo-ku, Kyoto 606–8501, Japan
H. Yamada
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshidahonmachi, Sakyo-ku, Kyoto 606–8501, Japan
K. Matsushige
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshidahonmachi, Sakyo-ku, Kyoto 606–8501, Japan
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Abstract

The structural and electric properties of newly synthesized vinylidene fluoride (VDF) oligomer thin films evaporated on various substrate were investigated. The structural behavior of the VDF oligomer thin films strongly depended on the kinds of substrate and substrate temperature during film preparation. In particular, the VDF oligomers epitaxially grew on KBr(001), aligned their molecular chain along the <110> direction of substrate surface, and were similar to polar Form Itype crystals of poly(VDF). While, the thin films evaporated on NaCl(001), SiO2/Si were non-polar Form II-type or mixture of both Form I- and Form II-type crystals with their molecular chain normal to the surface. These facts indicated that crystal field of substrate, based on van der Waals and electrostatic interactions, strongly influenced to ferroelectric phase transition of the VDF oligomer. In addition, we demonstrate the formation of the local polarized domains in the epitaxial crystals by applying electric pulses from a conducting AFM probe used as a positionable topelectrode, and confirm their piezoelectricity of the VDF oligomers for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 600: Symposium FF – Electroactive Polymers , 1999 , 101
Copyright
Copyright © Materials Research Society 2000

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References

1. Chen, X. Q., Yamada, H., Horiuchi, T., and Matsushige, K., Jpn. J. Appl. Phys., 37, 3834 (1998)10.1143/JJAP.37.3834Google Scholar
2. Chen, X. Q., Yamada, H., Terai, Y., Horiuchi, T., and Matsushige, K., and Weiss, P.S., Thin Solid Films, 353, 259 (1999)10.1016/S0040-6090(99)00411-3Google Scholar
3. Chen, X. Q., Yamada, H., Horiuchi, T., and Matsushige, K., Jpn. J. Appl. Phys., 38, 3932 (1999)Google Scholar
4. Bune, A. V., Fridkin, V. M., Ducharme, Stephen, Blinov, L. M., Palto, S. P., Sorokin, A. V., Yudin, S. G., and Zlatkin, A., Nature 391, 874(1998)Google Scholar
5. Bune, A. V., Zhu, Chuanxing, Ducharme, Stephen, Blinov, L. M., Fridkin, V. M., Palto, S. P., Petukhova, N. G., and Yudin, S. G., J. Appl. Phys., 85, 7869(1999)Google Scholar
6. Choi, Jaewu, Dowben, P. A., Pebley, Shawn, Bune, A. V., Ducharme, Stephen, Fridkin, V. M., Palto, S. P., and Petukhova, N., Phys. Rev. Lett. 80, 1328(1998)Google Scholar
7. Horiuchi, T., Fukao, K., and Matsushige, K.: Jpn. J. Appl. Phys. 26, L1839(1987)10.1143/JJAP.26.L1839Google Scholar
8. Hayashi, K., Ishida, K., Horiuchi, T., and Matsushige, K.: Jpn. J. Appl. Phys. 31, 4081(1992)Google Scholar
9. Ishida, K., Hayashi, K., Yoshida, Y., Horiuchi, T., and Matsushige, K.: J. Appl. Phys. 73, 7338 (1993).10.1063/1.354024Google Scholar
10. Noda, K., Ishida, K., Kubono, A., Horiuchi, T., and Matsushige, K., J. Appl. Phys., 86, 3688(1999)10.1063/1.371279Google Scholar