Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T15:29:48.853Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Properties of Phosphorous-Doped Amorphous Diamond

Published online by Cambridge University Press:  10 February 2011

S. M. Camphausen ,
A. F. Myers ,
S. P. Bozeman  and
J. J. Cuomo
S. M. Camphausen
Affiliation:
MTE Department, North Carolina State University, P.O. Box 7907, Raleigh, NC 27695
A. F. Myers
Affiliation:
Surface and Microanalysis Science Division, Chemical Science and Technology Laboratory, NIST, Gaithersburg, MD 20899
S. P. Bozeman
Affiliation:
Commonwealth Scientific Corporation, Alexandria, VA 22314
J. J. Cuomo
Affiliation:
MTE Department, North Carolina State University, P.O. Box 7907, Raleigh, NC 27695
Get access

Abstract

Hard carbon films can be prepared by the condensation of energetic carbon species at or below room temperature. These amorphous films are primarily tetrahedrally coordinated and contain high fractions of sp3 bonds leading to the terminology amorphous diamond. These films have been successfully doped with phosphorus up to 1 at.%, by other researchers by using a phosphorus doped graphite target. We have also investigated evaporated phosphorus in conjuction with a filtered cathodic arc to incorporate phosphorus into the films and have successfully incorporated phosphorus up to 40 at.% into our films using this technique. XPS showed that some of the phosphorus was clustered. PEELS revealed that with an incorporation of 40 at.% of phosphorus, the sp3 content was approximately 20%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 498: Symposium AA – Covalently Bonded Disordered Thin-Film Materials , 1997 , 141
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES:

1. Cuomo, J. J., Pappas, D.L., Bruley, J., Doyle, J.P. and Saenger, K.L., Journal of Applied Physics. 70(3), 1706(1991).Google Scholar
2. Lossy, R., Pappas, D.L., Roy, R.A. and Cuomo, J.J., Applied Physics Letters. 61(2), 171 (1992).Google Scholar
3. Veerasamy, V.S., Amaratunga, G.A.J., Davis, C.A., Milne, W.I., Hewitt, P. and Weiler, M., Solid State Electronics. 37(2), 319 (1994).Google Scholar
4. Amaratunga, G.A.J., Veerasamy, V.S., Davis, C.A., Milne, W.I., McKenzie, D.R. and Yuan, J., Weiler, M., Journal of Non-Crystalline Solids. 164–166, 1119 (1993).Google Scholar
5. Veerasamy, V.S., Amaratunga, G.A.J., Davis, C.A., Timbs, A.E., Milne, W.I. and D.R., , Journal of Physics: Condensed Matter. 5, L169 (1993).Google Scholar
6. Amaratunga, G.A.J., Veerasamy, V.S., Milne, M.I., Davis, C. A., Silva, S.R.P. and MacKenzie, H.S., Applied Physics Letters. 63(3), 370 (1993).Google Scholar
7. Ding, M.Q., Myers, A.F., Choi, W.B., Vispute, R.D., Camphausen, S.M., Narayan, J., Cuomo, J.J. and Hren, J.J., Journal of Vacuum Science and Technology B. 15(4), 840 (1997).Google Scholar
8. Bruley, J., Williams, D.B., Cuomo, J.J. and Pappas, D.P., Journal of Microscopy. 180 Pt 1, 22 (1995).Google Scholar