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Structural and Electrical Properties of Molecular Beam Deposited Polycrystalline Silicon

Published online by Cambridge University Press:  22 February 2011

Sylvain L. Delage ,
S.-J. Jeng ,
D. Jousse  and
S. S. Iyer
Sylvain L. Delage
Affiliation:
IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
S.-J. Jeng
Affiliation:
IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
D. Jousse
Affiliation:
IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
S. S. Iyer
Affiliation:
IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

The structural and electrical properties have been investigated of antimony doped polycrystalline silicon films obtained by molecular beam deposition on oxidized silicon substrates. We show that low resistivity films with smooth morphology are obtained by Solid Phase Crystallization of antimony doped amorphous silicon layers deposited at 250°C. A resistivity of 4.3 mΩ cm is obtained by crystallizing the films at temperatures as low as 650°C for 15 minutes. Similar resistivities are typically obtained by Chemical Vapor Deposition at temperature of at least 850 °C. In-situ crystallization of the amorphous silicon is needed to obtain low resistivity polysilicon. We also show that direct deposition above 650 ° C gives rise to polycrystalline silicon with much higher resistivities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 83
Copyright
Copyright © Materials Research Society 1988

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References

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