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Structural and Electrical Properties of Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si

Published online by Cambridge University Press:  21 February 2011

S.M. Johnson ,
W.L. Ahlgren ,
M. H. Kalisher ,
J. B. James  and
W. J. Hamilton Jr.
S.M. Johnson
Affiliation:
Santa Barbara Research Center, 75 Coromar Dr., Goleta, CA 93117
W.L. Ahlgren
Affiliation:
Santa Barbara Research Center, 75 Coromar Dr., Goleta, CA 93117
M. H. Kalisher
Affiliation:
Santa Barbara Research Center, 75 Coromar Dr., Goleta, CA 93117
J. B. James
Affiliation:
Santa Barbara Research Center, 75 Coromar Dr., Goleta, CA 93117
W. J. Hamilton Jr.
Affiliation:
Santa Barbara Research Center, 75 Coromar Dr., Goleta, CA 93117
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Abstract

The structural and electrical properties of heteroepitaxial HgCdTe/CdZnTe/GaAs/Si were evaluated using high-resolution x-ray diffraction techniques and Hall-effect measurements as a function of temperature. Significant tilting of the layers was found for both {100} and {111} CdZnTe layers grown on misoriented {100}GaAs/Si substrates, consistent with the interpretation of a low-angle tilt boundary being formed at the interface to relieve the large lattice mismatch between the layers. The GaAs layer is in a state of biaxial tension before and after the growth of the CdZnTe layers. The x-ray FWHM of HgCdTe layers grown by LPE on these substrates was found to be reduced from that of the MOCVD-grown CdZnTe buffer layer due to both an annealing effect during LPE growth and to the increased distance of layer surface from the defective CdZnTe/GaAs interface. Hall-effect mobility for {100}HgCdTe layers was nearly identical to that of layers grown on bulk CdZnTe substrates. High-quality heterojunction infrared detectors have been fabricated using these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 351
Copyright
Copyright © Materials Research Society 1990

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References

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