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Structural and Electrical Properties of Gas immersion Laser Doped Layers in Crystalline Silicon

Published online by Cambridge University Press:  22 February 2011

T.W. Sigmon ,
P.G. Carey ,
R.L. Press ,
T.S. Fahlen  and
R.J. Pressley
T.W. Sigmon
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
P.G. Carey
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
R.L. Press
Affiliation:
XMR, Inc. Santa Clara, CA 95051
T.S. Fahlen
Affiliation:
XMR, Inc. Santa Clara, CA 95051
R.J. Pressley
Affiliation:
XMR, Inc. Santa Clara, CA 95051
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Abstract

4 He backscattering and channeling and 4-point probe resistivity measurements are used to characterize the doping of 〈100〉 Si directly from the gas phase by using a laser induced melt/recrystallization process. Impurity concentrations from 3×1019 to 5×1020 cm−3 and sheet resistivities as low as 20 Ω/╒ are obtained by variation of the laser energy density or number of passes. Diodes fabricated by this process exhibit near ideal I-V characteristics with sharp reverse breakdowns determined by junction edge effects. Annealing at 850° C further reduces the generation-recombination centers to values that result in an ideality factor of 1.0.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 247
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. See Ferris, S.D., Leamy, H.J. and Poate, J.M., eds., Laser-Solid Interactions and Laser Processing - 1978 (American Institute of Physics, New York 1979).;Google Scholar
White, C.W. and Peercy, P.S., eds., Laser and Electron Beam Processing of Materials (Academic Press, New York 1980).;Google Scholar
Gibbons, J.F., Hess, L.D. and Sigmon, T.W., eds., Laser and Electron-Beam Solid Interactions and Materials Processing (North-Holland, New York 1981).;Google Scholar
Appleton, B.R. and Celler, G.K., eds., Laser and Electron-Beam Interactions with Solids (North-Holland, New York 1982),Google Scholar
and Narayan, J., Brown, W.L., and Lemons, R.A., eds., Laser-Solid Interactions and Transient Thermal Processing of Materials (North-Holland, New York 1983).Google Scholar
2.Galvin, G.J., Mayer, J.W., and Thompson, M.O., “Crystal Growth Dynamics by Pulsed Laser Melting of Single Crystal Silicon” in Proc. U.S.-Japan Seminar on Solid Phase Epitaxy and Interface Kinetics, Oiso, Japan 1983 (In Press).Google Scholar
3.Chikawa, J., Sato, F., and Sunada, T., “Atomic Process of Crystallization in Pulsed Laser Annealing” Ibid.Google Scholar
4.McWilliams, B.M., Herman, I.P., Hyde, R.A., Mitlitsky, F., and Wood, L.L., to be published.Google Scholar
5.Liu, T.M. and Oldham, W.G., IEEE Electron Dev. Lett. EDL–4, 59 (1983).Google Scholar
6.Turner, G.B., Tarrant, D., Pollock, G., Pressley, R., and Press, R., Appl. Phys. Lett. 39, 967 (1981).Google Scholar
7.Perino, S. C., “The Electronic Structure and Deposition Kinetics of Arsenic on the Silicon Surface” Ph.D. Thesis, Stanford Electronics Labs (1982).Google Scholar