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Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

Published online by Cambridge University Press:  10 February 2011

G. Sade ,
J. Pelleg  and
A. Grisaru
G. Sade
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
J. Pelleg
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
A. Grisaru
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
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Abstract

The TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.

It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 277
Copyright
Copyright © Materials Research Society 1997

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