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Structural and Electrical Characterisation of Nickel Silicides Contacts on Silicon Carbide

Published online by Cambridge University Press:  21 March 2011

F. La Via ,
F. Roccaforte ,
V. Raineri ,
P. Musumeci  and
L. Calcagno
F. La Via
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121, Catania, Italy
F. Roccaforte
Affiliation:
INFM and Physics Department, Corso Italia 57, 95129, Catania, Italy
V. Raineri
Affiliation:
INFM and Physics Department, Corso Italia 57, 95129, Catania, Italy
P. Musumeci
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121, Catania, Italy
L. Calcagno
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121, Catania, Italy
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Abstract

The interfacial reaction and phase formation as a function of the annealing temperature (600÷1000°C) and times were investigated on nickel thin films evaporated on n type 6H-SiC (0001) substrate. The study was carried out employing a combination of Rutherford Backscattering Spectrometry, X-Ray Diffraction, Transmission Electron Microscopy and sheet resistance measurements. Also several TLM structures and Schottky diodes were fabricated with the same processes and a correlation has been found between the annealing process and the electrical measurements. The only nickel silicide phase that has been observed between 600 and 950 °C was the Ni2Si. The carbon of the consumed silicon carbide layer has been dissolved in the silicide film, during the reaction, forming carbon precipitates. The Ni2Si/SiC Schottky diodes show an almost ideal characteristics (n=1.07) and a barrier height of about 1.3 eV. From the electrical characterisation a non uniform Schottky barrier height seems to be formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E6.9
Copyright
Copyright © Materials Research Society 2001

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References

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