Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-20T11:23:32.015Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Chemical Microanalysis of Oxygen-Bearing Precipitates in Silicon

Published online by Cambridge University Press:  15 February 2011

R.W. Carpenter ,
I. Chan ,
H.L. Tsai ,
C. Varker  and
L.J. Demer
R.W. Carpenter
Affiliation:
CENTER FOR SOLID STATE SCIENCE, ARIZONA STATE UNIVERSITY, TEMPE, AZ 85287
I. Chan
Affiliation:
CENTER FOR SOLID STATE SCIENCE, ARIZONA STATE UNIVERSITY, TEMPE, AZ 85287
H.L. Tsai
Affiliation:
CENTER FOR SOLID STATE SCIENCE, ARIZONA STATE UNIVERSITY, TEMPE, AZ 85287
C. Varker
Affiliation:
CENTER FOR SOLID STATE SCIENCE, ARIZONA STATE UNIVERSITY, TEMPE, AZ 85287 Motorola Semiconductor Research Laboratories, Phoenix, AZ 85008
L.J. Demer
Affiliation:
CENTER FOR SOLID STATE SCIENCE, ARIZONA STATE UNIVERSITY, TEMPE, AZ 85287 Metallurgical Engineering Dept., University of Arizona, Tucson, AZ 85721
Get access

Abstract

Precipitation in CZ-silicon during post-growth two-stage heat treatment has been examined using the methods of high resolution analytical electron microscopy. Electron transparent specimens prepared from these specimens, exhibited a low density of plate type precipitates on {100} planes. Microdiffraction experiments showed the precipitates to be consistently non-crystalline. Electron energy loss spectra showed that the precipitates contained oxygen, but carbon was not detected. It was found that carbon artifact absorption edges could be induced in spectra by specimen contamination in the microscope. The use of a low temperature stage eliminated this problem. Complementary characteristic x-ray microanalysis showed that metallic impurities had not segregated to these precipitates in this particular case, although this has been observed elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 195
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Maher, D. M., Staudinger, A. and Patel, J. R., Jour. App. Phys. 47, 3813 (1976).CrossRefGoogle Scholar
2. Tempelhoff, K., Spiegelberg, F. and Gleichmann, R., p. 585 in Semiconductor Si 1977, Ed. by H. R. Huff and E. Sirtl, Proceed. Vol. 77–2, Electrochem. Soc.(1977).Google Scholar
3. Patel, J. R., p. 189 in Semiconductor Silicon 1981, Ed. by H. R. Huff and R. J. Kriegler, Proceed. Vol. 81–5, Electrochemical Soc.(1981).Google Scholar
4. Carpenter, R. W. and Bentley, J., p. 153 in SEM/1979/I, Ed. by O. Johari, SEM, Inc., AMF O'Hare, USA.Google Scholar
5. Bentley, J., p. 73 in Proc. 38th Ann. Mtg. EMSA, Ed. by G. W. Bailey, Claitor's Pub. Div.(1980).Google Scholar
6. Raether, H., Excitation of Plasmons and Interband Transitions by Electrons, Springer-Verlag, Berlin(1980).Google Scholar
7. Egerton, R. F., Ultramicroscopy 3, 243(1978).CrossRefGoogle Scholar
8. Yang, K. H., Anderson, R. and Kappert, H. F., App. Phys. Lett. 33(3), 225 (1978).CrossRefGoogle Scholar
9. Bourret, A. and Colliex, C., p. 12 in Imaging and Microanalysis with High Spatial Resolution, Proc. Castle Hot Springs Conf. 1982, Ed. by O. Krivanek HREM Facility, ASU(1982).Google Scholar
10. Chan, I.Y.T., Abrahams, M. S. and Carpenter, R. W., unpublished research, HREM Facility, Arizona State University, and R.C.A. Laboratories, Princeton, N.J.Google Scholar