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Structural and Chemical Analysis of Nanoscale Resistive Switching Devices: Assessment on Nonlinear Properties

Published online by Cambridge University Press:  27 August 2015

Kate J. Norris ,
J. Joshua Yang  and
Nobuhiko P. Kobayashi
Kate J. Norris
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 U.S.A Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz – NASA Ames Research Center, Moffett Field, CA 94035
J. Joshua Yang
Affiliation:
Electrical and Computer Engineering, University of Massachusetts, Amherst, MA 01003 USA
Nobuhiko P. Kobayashi
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 U.S.A Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz – NASA Ames Research Center, Moffett Field, CA 94035
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Abstract

Investigation into the phenomenon of resistive switching, a reversible change in electrical resistance by the application of a voltage bias, has given rise to the device fabrication, DC electrical testing, and cross sectional TEM/EELS characterization of nanoscale resistive switching devices. Typically, resistive switching devices are composed of a thin oxide layer between two conductive electrodes where applied bias can alter the resistance states. In a cross-bar array, nonlinearity of device I-V relation is a highly desirable characteristic that helps to mitigate the sneak path current leakage issue. Negative differential resistance (NDR) switching behavior offers such nonlinearity and has been observed in TaOx nanoscale devices utilizing certain electrode materials. To investigate this phenomenon, nanodevices were fabricated by sputtering TaOx onto TiN nanovias capped Nb electrodes. Cross sectional TEM/EELS were performed to reveal the physical and chemical changes in these devices to explore possible origins of nonlinear behavior when these top electrode materials are utilized with TaOx films.

Keywords

memorynanostructuremetal-insulator transition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2137740
Copyright
Copyright © Materials Research Society 2015 

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