Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T07:37:02.295Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Analysis and Electronic Properties of in on Si(100) from Synchrotron Photoemission Studies

Published online by Cambridge University Press:  25 February 2011

D. H. Rich ,
A. Samsavar ,
T. Miller ,
H. F. Lin  and
T. -C. Chiang
D. H. Rich
Affiliation:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801.
A. Samsavar
Affiliation:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801.
T. Miller
Affiliation:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801.
H. F. Lin
Affiliation:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801.
T. -C. Chiang
Affiliation:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801.
Get access

Abstract

High-resolution photoemission spectroscopy was used to study the initial growth and interaction of In on Si(100). A quantification of the number of Si surface atoms selectively modified in the presence of an In adatom is enabled by decomposing the Si 2p core level into bulk and surface-shifted components; this analysis leads to an In-Si bonding coordination number determination. The In-to-Si bonding coordination number is 3 for very low In coverages and decreases to 2 for one half monolayer coverage. An analysis of the In 4d core levels indicates that the In adatoms occupy equivalent sites for the first 0.5 monolayers. Surface state emission near the top of the valence band persists for coverages exhibiting no Si 2p surface core level shift; implications regarding the different mechanisms I ehind the surface state and surface core level shift are addressed. The results are consistent with a structural model deduced from electron diffraction, Auger, and scanning electron microscopy studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 219
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Knell, J., Sundgren, J.-E., Hansson, G.V. and Greene, J.E., Surf. Sci 16, 512 (1986).CrossRefGoogle Scholar
2. Rich, D.H., Samsavar, A., Miller, T., Lin, H.F., Sundgren, J.-E., Greene, J.E., and Chiang, T.-C., Phys. Rev. Lett. 58, 579 (1987).CrossRefGoogle Scholar
3. Miller, T., Rosenwinkel, E., and Chiang, T.-C., Solid State Commun. 47, 935 (1983).CrossRefGoogle Scholar
4. Miller, T., Shapiro, A.P., and Chiang, T.-C., Phys. Rev. B 31, 7915 (1985).CrossRefGoogle Scholar
5. Himpsel, F.J., Heimann, P., Chiang, T.-C., and Eastman, D.E., Phys. Rev. Lett. 45, 1112 (1980).CrossRefGoogle Scholar
6. Miller, T., Hsieh, T.C., and Chiang, T.-C., Phys. Rev. B 33, 6983 (1986).CrossRefGoogle Scholar
7. Chiang, T.-C., CRC Critical Reviews in Solid State and Materials Sciences, (submitted).Google Scholar
8. Hamers, R.J., Tromp, R.M., and Demuth, J.E., Phys. Rev. B 34, 5343 (1986).CrossRefGoogle Scholar
9. Himpsel, F.J. and Eastman, D.E., J. Vac. Sci. Technol. 16, 1297 (1979).CrossRefGoogle Scholar
10. Wachs, A.L., Miller, T., Hsieh, T.C., Shapiro, A.P., and Chiang, T.-C., Phys. Rev. B 22, 2326 (1985).CrossRefGoogle Scholar
11. Ihm, J., Cohen, M.L., and Chadi, D.J., Phys. Rev. B 21, 4592 (1980).CrossRefGoogle Scholar
12. Kruger, P., Mazur, A., Pollmann, J., and Wolfgarten, G., Phys. Rev. Lett. 51, 1468 (1986).CrossRefGoogle Scholar