Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T02:29:22.114Z Has data issue: false hasContentIssue false
  • English
  • Français

Strong Polarity and Bond Characterization of Nanostructured Silicon Nitride Solids

Published online by Cambridge University Press:  25 February 2011

Lide Zhang ,
Chimei Mo ,
Tao Wang  and
Cunyi Xie
Lide Zhang
Affiliation:
Institute of Solid State Physics, Academia Sinica, Hefei 230031, P.R., China
Chimei Mo
Affiliation:
Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, P.R.China
Tao Wang
Affiliation:
Institute of Solid State Physics, Academia Sinica, Hefei 230031, P.R., China
Cunyi Xie
Affiliation:
Institute of Solid State Physics, Academia Sinica, Hefei 230031, P.R., China
Get access

Abstract

Nanostructured silicon nitride solids (NANO–SSNS) were investigated by x–ray photoelectron spectroscopy (XPS), electron spin resonance (ESR) and dielectric measurements. It is found that the dielectric constant of NANO–SSNS depends strongly on the measuring frequency, f. When f<100Hz, at room temperature it is forty times as much as that of conventional Si3N4. ESR measurements show that a large number of unbinding electrons exist in interfaces. This suggests that the NANO–SSNS possess strong polarity. The study on the bond properties indicates that a large number of unsaturated and dangling bonds exist in interfaces of NANO–SSNS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 286: Symposium J – Nanophase and Nanocomposite Materials , 1992 , 107
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Goto, T., Hirai, T., J. Mater. Sci. 24, 821(1989).Google Scholar
2. Shmid, Wayde R., Sukumar, Vijay, Hurley, Willim J. Jr., Garcia, Roberto, Doremns, Robert H., Interrante, Leonard V. and Renlund, Gary M., J. Am. Ceram. Soc., 73(8), 2412(1990).Google Scholar
3. Hepburn, A.R., Marshall, J.M., Main, C., Powell, M.J. and Berkel, C.V., Phys. Rev. Lett., 56, 2215(1986).Google Scholar
4. Jouse, D., Kanicki, J. and Stathis, J.H., Appl. Phys. Lett., 54, 1043(1989)Google Scholar
5. Warren, W.L., Lenahan, P.M. and Curry, S.E., Phys. Rev. Lett., 65, 207(1990)Google Scholar
6. Morimoto, A., Tsuijirmura, Y., Kumeda, M. and Shimizu, T., Jpn. J. Appl. Phys., 24, 1394(1985).Google Scholar
7. Wang, Tao, Zhang, Lide, Li, Daohuo and Hu, Keliang, Proceeding of 2th Conference of Nanostructured Materials (Hefei, China, 1991 in Chinese)p.80.Google Scholar
8. Cai, Shuzhi, Mo, Chimei and Zhang, Lide, Cheng, Benpei, Acta Physica Sinica, 41(10), 1620(1992)(in Chinese)Google Scholar
9. Aiyama, T., Fukunaga, T., Niihara, K., Hiraf, T. and Sukuki, K., J. Non—crystalline Solids, 33, 131(1979).Google Scholar