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Strong Blue and Violet Light Emission from Silicon- and Germanium-Implanted Silicon-Dioxide Films

Published online by Cambridge University Press:  10 February 2011

L. Rebohle ,
I. E. Tyschenko ,
J. Von Borany ,
B. Schmidt ,
R. Grötzschel ,
A. Markwitz ,
R. A. Yankov ,
H. Fröb  and
W. Skorupa
L. Rebohle
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
I. E. Tyschenko
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
J. Von Borany
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
B. Schmidt
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
R. Grötzschel
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
A. Markwitz
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
R. A. Yankov
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
H. Fröb
Affiliation:
Institutfür Angewandte Photophysik, Technische Universität, D-01062 Dresden, Germany
W. Skorupa
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
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Abstract

Photoluminescence (PL) and electroluminescence (EL) from Si+- and Ge+-implanted SiO2 layers thermally-grown on a Si substrate were studied. The PL spectra were recorded after annealing at temperatures in the range of 400° to 1200°C. Single-peak PL at 460 nm and doublepeak PL at 420 and 385 nm due to Si+-implanted and Ge+-implanted oxide layers, respectively, reached a maximum following heat treatment at 500°C for 30 min. The EL spectra from the Gerich oxides after annealing at 1000°C correlated very well with the PL signal, and showed a linear dependence on the injection current. The EL emission was strong enough to be readily seen with the naked eye, and the EL efficiency was estimated to be about 5×10−4. High-resolution transmission electron microscopy (HRTEM) analysis showed that the formation of nanocrystals in the implanted oxide layers occurred at annealing temperatures in excess of 800°C. The observed light emission is attributable to the presence of-≡Si-Si≡, ≡Si-Ge≡ and ≡Ge-Ge≡ centres in SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 175
Copyright
Copyright © Materials Research Society 1998

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References

1. Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Shcheglov, K.V., Yang, C.M., Vahala, K.J. and Atwater, H.A., Appl. Phys. Lett. 66, 745 (1995).Google Scholar
3. Liao, L-S., Bao, X-M., Li, N-S., Zheng, X-Q.,, Min, N-B., Solid State Commun. 97, 1039 (1996).Google Scholar
4. Kozlowski, F., Porteanu, H.E., Petrova-Koch, V., Koch, F., Mat. Res. Soc. Proc. 452, 657 (1997).Google Scholar
5. Seol, K., Ohki, Y., Nishikawa, H., Takiyama, M., Hama, Y., J.Appl.Phys. 80, 6444 (1996).Google Scholar
6. Zhao, X., Schoenfeld, O., Kusano, J., Aoyagi, Y., and Sugano, T., Jpn.J.Appl.Phys. 33, L649 (1994).Google Scholar
7. Skorupa, W., Yankov, R.A., Rebohle, L., Fröb, H., Böhme, T., Leo, K., Tyschenko, I.E. and Kachurin, G.A., Nucl. Instr. Meth. B120, 106 (1996).Google Scholar
8. Rebohle, L., Tyschenko, I.E., Fröb, H., Leo, K., Yankov, R.A., von Borany, J., Skorupa, W., Microelectr. Engineering. 36, 107 (1997).Google Scholar
9. Skuja, L.N., J.Non-Cryst.Solids. 149, 77 (1992).Google Scholar
10. Thomon, R., Shimogaichi, Y., Mizuno, H., Ohki, Y., Nagasawa, K., Hama, Y., Phys. Rev. Lett. 62, 1388 (1989).Google Scholar
11. Hosono, H., Abe, Y., Kinser, D.L., Weeks, R.A., Muta, K., Kawazoe, H., Phys.Rev. B. 46, 11445 (1992)Google Scholar