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Stress-Temperature Behavior and Stress Relaxation in Ti/Al-0.5%Cu/TiN and TiN/W Thin Films

Published online by Cambridge University Press:  15 February 2011

L. Doucet ,
A. Brun ,
H. Jaouen ,
M. Dupeux  and
M. Ignat
L. Doucet
Affiliation:
Centre Commun CNET SGS-THOMSON, BP 16, 38921 Crolles, France LTPCM-ENSEEG, BP75, 38402 Saint Martin d'Hères, France
A. Brun
Affiliation:
Centre Commun CNET SGS-THOMSON, BP 16, 38921 Crolles, France
H. Jaouen
Affiliation:
Centre Commun CNET SGS-THOMSON, BP 16, 38921 Crolles, France
M. Dupeux
Affiliation:
LTPCM-ENSEEG, BP75, 38402 Saint Martin d'Hères, France
M. Ignat
Affiliation:
LTPCM-ENSEEG, BP75, 38402 Saint Martin d'Hères, France
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Abstract

The stress behavior of two structures (Ti/Al-0.5%Cu/TiN and TiN/W) has been analyzed versus temperature up to 400 °C using the Flexus measurement system. Microstructure modifications induce stress variations with temperature. Furthermore, stress relaxation after annealing has been investigated. Al-based metallization stress is essentially due to thermal issues and reaches rapidly its yield strength whereas the W film exhibits high intrinsic stress. Microstructural observations afte deposition and after annealing have been conducted using a non destructive technique, the Thermal Wave Imager.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 657
Copyright
Copyright © Materials Research Society 1996

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