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Stresses in Ferroelectric Thin Films

Published online by Cambridge University Press:  16 February 2011

Seshu B. Desu
Seshu B. Desu*
Affiliation:
Department of Materials Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061.
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Abstract

The stresses in rf sputtered BaTiO3 thin films, deposited on both Si and sapphire single crystals, were studied. From the measured total film stress values, both the intrinsic stresses in the film and the elastic coefficients [Ef/(1–vf)] of the film were obtained. BaTiO3 films can be obtained in any stress state (tensile, stress free or compressive) by varying the deposition temperature, deposition pressure, and substrate. At lower temperatures and pressures compressive intrinsic stresses were observed whereas, at high deposition temperatures and pressures intrinsic stresses were tensile in nature. The [Ef/(1–vf)] value approached the single crystal value for films deposited at low pressures and decreased significantly with increasing deposition pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 199
Copyright
Copyright © Materials Research Society 1990

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References

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