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Stress Liner Proximity Technique to Enhance Carrier Mobility in High-κ Metal Gate MOSFETs

Published online by Cambridge University Press:  31 January 2011

Dechao Guo ,
Kathryn Schonenberg ,
Jie Chen ,
Daniel Jaeger ,
Pranita Kulkarni ,
Unoh Kwon ,
Yue Liang ,
Joyce Liu ,
Liyang Song  and
Franck Arnaud
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Dechao Guo
Affiliation:
[email protected], IBM T.J. Watson Research Center, Yorktown Heights, New York, United States
Kathryn Schonenberg
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
Jie Chen
Affiliation:
[email protected], Chartered Semiconductor Manufacturing, Hopewel Junction, New York, United States
Daniel Jaeger
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
Pranita Kulkarni
Affiliation:
[email protected], IBM T.J.Watson Research Center, Yorktown Heights, New York, United States
Unoh Kwon
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
Yue Liang
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
Joyce Liu
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
Liyang Song
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
Franck Arnaud
Affiliation:
[email protected], STMicroelectronics, Hopewell Junction, Hopewell Junction, New York, United States
Huiming Bu
Affiliation:
[email protected], IBM T.J.Watson Research Center, Yorktown Heights, New York, United States
Michael Chudzik
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
William K Henson
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
Philip J Oldiges
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
Melanie Sherony
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
An Steegen
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
Voon-Yew Thean
Affiliation:
[email protected], IBM Semiconductor Research and Development Center, Hopewell Junction, New York, United States
Mukesh Khare
Affiliation:
[email protected], IBM T.J.Watson Research Center, Yorktown Heights, New York, United States
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Abstract

For the first time, we discuss the compatibility of stress proximity technique (SPT) with dual stress liner (DSL) in high-κ/metal gate (HK/MG) technology. The short-channel mobility enhancement and the drive current improvement brought by SPT have been demonstrated at 32nm technology node. With maintained short channel control and threshold voltage roll-off characteristics, SPT has achieved 7% drive current improvement for both nFET and pFET from the optimization of SPT with DSL.

Keywords

Hfmicroelectronicsdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1194: Symposium A – High-k Dielectrics on Semiconductors with High Carrier Mobility , 2009 , 1194-A04-02
Copyright
Copyright © Materials Research Society 2010

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