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Stress Effects on Al and Al(Cu) Thin Film Grain-Boundary Diffusion

Published online by Cambridge University Press:  10 February 2011

X.-Y. Liu  and
C.-L. Liu
X.-Y. Liu
Affiliation:
Motorola Inc., M.S. B285, PO Box 1663, Los Alamos, NM 87545
C.-L. Liu
Affiliation:
Motorola Inc., M.S. B285, PO Box 1663, Los Alamos, NM 87545
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Abstract

Stress effects on grain-boundary diffusion in Al and Al(Cu) thin films are evaluated through atomistic simulations. Specifically, the grain-boundary vacancy formation and migration and interstitial migration energetics are obtained as a function of stress states in thin film. In general, the activation energies vary at a rate of 0.1 eV per 1.0 % strain at the grain boundary investigated, indicating the possible impact on electromigration phenomenon in these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 451
Copyright
Copyright © Materials Research Society 2000

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References

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