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Stress Effect on Oxidation Kinetics of Silicon with Different Surface Orientations

Published online by Cambridge University Press:  22 February 2011

Keitaro Imai  and
Kikuo Yamabe
Keitaro Imai
Affiliation:
Toshiba Co., ULSI Research Center, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, JAPAN
Kikuo Yamabe
Affiliation:
Toshiba Co., ULSI Research Center, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, JAPAN
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Abstract

Thermal oxidation of different crystallographic surface orientations of Si reveals a complex rate behavior not only in the initial stage but also in sequential two step oxidation with high temperature annealing where enhanced oxidation is observed as well. These phenomena are explained by the reduction of oxygen solubility in SiO2 due to stress in the SiO2 film, which has been confirmed by isotope labeling oxidation with SIMS analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 107
Copyright
Copyright © Materials Research Society 1992

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References

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