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Stress Driven Rearrangement Instability of Crystalline Films with Electromechanical Interaction
Published online by Cambridge University Press: 01 February 2011
Abstract
It was demonstrated, on general thermodynamic grounds, that, in non-hydrostatically stressed elastic systems, phase and grain interfaces undergo morphological destabilization due to different mechanisms of “mass rearrangement”. Destabilization of free surfaces due to the combined action of mass rearrangement in the presence of electrostatic field has been well known since the end of the 19th century. Currently, morphological instabilities of thin solid films with electro-mechanical interactions have found various applications in physics and engineering. In this paper, we investigate the combined effects of the stress driven rearrangement instabilities and the destabilization due to the electro-mechanical interactions. The paper presents relevant results of theoretical studies for ferroelectric thin films. Theoretical analysis involves highly nonlinear equations allowing analytical methods only for the initial stage of unstable growth. At present, we are unable to explore analytically the most important, deeply nonlinear regimes of growth. To avoid this difficulty, we developed numerical tools facilitating the process of solving and interpreting the results by means of visualization of developing morphologies.
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- Copyright © Materials Research Society 2006
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