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The Stress Driven Rearrangement Instabilities in Electronic Materials and in Helium Crystals

Published online by Cambridge University Press:  01 February 2011

Michael Grinfeld ,
Pavel Grinfeld ,
Haruo Kojima ,
John Little ,
Ryuichi Masutomi ,
Per-Olof. Persson  and
Tsvetanka Zheleva
Michael Grinfeld
Affiliation:
US Army Research Laboratory, Aberdeen Proving Ground, MD 21005–5069, USA
Pavel Grinfeld
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Haruo Kojima
Affiliation:
Rutgers University, Serin Physics Laboratory, Piscataway, NJ 08854, USA
John Little
Affiliation:
US Army Research Laboratory, Adelphi, MD, USA
Ryuichi Masutomi
Affiliation:
Rutgers University, Serin Physics Laboratory, Piscataway, NJ 08854, USA
Per-Olof. Persson
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Tsvetanka Zheleva
Affiliation:
US Army Research Laboratory, Adelphi, MD, USA
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Abstract

At present, there is a consensus that various Stress Driven Rearrangement Instabilities (SDRI) are the implications of the mathematically rigorous theoretical Gibbs thermodynamics. Many applied researchers and practitioners believe that SDRI are also universal physical phenomena occurring over a large range of length scales and applied topics. There is a multitude of publications claiming experimental observation of the SDRI based phenomena. This opinion is challenged by other highly respected scholars claiming theoretical inconsistencies and multiple experimental counterexamples. Such an uncertainty is too costly for further progress on the SDRI topic. The ultimate goal of our project is to resolve this controversy.

The project includes experimental, theoretical, and numerical studies. Among various plausible manifestations of SDRI, the authors focused only on two most promising for which the validity of the SDRI has already been claimed by other researchers: a) stress driven corrugations of the solid-melt phase interface in macroscopic quantum 4He and b) the dislocation-free Stranski-Krastanov pattern of growth of semiconductor quantum dots. We devised a program and experimental set-ups for testing applicability of the SDRI mechanisms using the same physical systems as before but using implications of the SDRI theory for 2D patterning which have never been tested in the past.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 849: Symposium KK – Kinetics-Driven Nanopatterning on Surfaces , 2004 , KK4.5
Copyright
Copyright © Materials Research Society 2005

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References

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