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Stress Distribution in Si Under Patterned thin Film Structures

Published online by Cambridge University Press:  15 February 2011

S. P. Wong ,
L. Huang ,
W. S. Guo ,
W. Y. Cheung  and
Shounan Zhao
S. P. Wong
Affiliation:
Department of Electronic Engineering and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong.
L. Huang
Affiliation:
Department of Electronic Engineering and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong.
W. S. Guo
Affiliation:
Department of Electronic Engineering and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong.
W. Y. Cheung
Affiliation:
Department of Electronic Engineering and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong.
Shounan Zhao
Affiliation:
Department of Applied Physics, South China University of Technology, Guangzhou, China.
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Abstract

We have employed the infrared photoelasticity (PE) method to study the stress distribution in Si substrates under patterned thin film structures such as thermal oxide layers partially covered by metal films and oxide layers with long trench openings. It is demonstrated that a lot of information on the two dimensional stress distribution in the substrate under patterned thin film structures can be obtained from PE experiments. The capability, limitation, and further development of the PE method for semiconductor applications are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 436: Symposium CC – Thin Films Stresses and Mechanical Properties VI , 1996 , 239
Copyright
Copyright © Materials Research Society 1997

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References

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