Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T01:56:38.791Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress Distribution and Critical Thickness of Thin Epitaxial Films

Published online by Cambridge University Press:  26 February 2011

S. Sharan ,
J. Narayan  and
K. Jagannadham
S. Sharan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N. C. 27695 – 7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N. C. 27695 – 7916
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N. C. 27695 – 7916
Get access

Abstract

We have calculated the stress distribution and critical thickness for the growth of strained epilayers having various values of misfit between the epilayer and the substrate. During formation of epitaxial films, the growth (pseudomorphic) occurs upto a certain thickness with planar spacing normal to the interface being essentially the same both in the substrate and the film. Above a critical thickness it becomes energetically favorable for the film to contain dislocations. This occurs usually by generating glide dislocations near the free surface because there is a lack of dislocation sources in mostly “defect-free” semiconductor materials. We present an analysis of the critical phenomena in semiconductors based upon this experimental fact. In all the previous analyses, the critical step associated with the generation of dislocations was neglected. We also consider finite (island) growth of thin films and its effect on critical phenomena. The experimental results show the presence of glide dislocations in Ge/Si with the extra half planes in silicon substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 31
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Van der Merwe, J. H., J. Appl. Phys., 34, 123, (1962).Google Scholar
2.Van der Merwe, J. H., in Single Crystal Films, Eds. Francombe, M. H. and Sato, H., Pergamon Press, Oxford, p. 139, (1964).Google Scholar
3.Matthews, J. W., Mader, S., and Light, T. B., J. Appl. Phys., 41, 3800, (1970).Google Scholar
4.Matthews, J. W., Blakeslee, A. E., and Mader, S., Thin Solid Films, 33, 253, (1976).Google Scholar
5.Matthews, J. W. in Dislocations in Solids, Ed. Nabarro, F. R. N., North Holland Publishing Company, p. 470, (1979).Google Scholar
6.People, R. and Bean, J. C., Appl. Phys. Lett., 47, 322, (1985).Google Scholar
7.People, R. and Bean, J. C., Appl. Phys. Lett., 49, 229, (1986).Google Scholar
8.Grabow, M. H. and Gilmer, G. H., Initial Stages of Epitaxial Growth, Eds. Hull, R., Gibson, J. M. and Smith, D. A., MRS Proc., 94, 15, (1987).Google Scholar
9.Grabow, M. H. and Gilmer, G. H., MRS Fall Meeting (1987).Google Scholar
10.Dodson, B. W. and Taylor, P. A., Appl. Phys. Lett., 49, 642, (1986).Google Scholar
11.Narayan, J., Larson, B. C. and Christie, W. H., Laser - Solid Interactions and Laser Processing, Eds. Ferris, S. D., Leamy, H. J. and Poate, J. M., MRS Boston, p. 440 (1978).Google Scholar
12.Kyam, E. P., Eaglesham, D. J., Humphreys, C. J., Maher, D. M. and Bean, J. C., MRS Fall Meeting (1987).Google Scholar
13.Jagannadham, K. and Marcinkowski, M. J., Mater. Sci. Engg., 38, 259, (1979).Google Scholar
14.Jagannadham, K. and Marcinkowski, M. J., Mater. Sci. Engg., 41, 81, (1979).Google Scholar
15.Jagannadham, K. and Marcinkowski, M. J., Unified Theory of Fracture, Ed. Wohlbier, Fred H., Trans Tech House, Switzerland, (1983).Google Scholar
16.Mura, T. in Advances in Materials Research, Ed. Herman, H., 3, p.90, (1970).Google Scholar
17.Narayan, J., Fathy, D., Sharan, S. and Nandedkar, A. S. (to be published).Google Scholar